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eGaN® FET Reliability
EPC
This presentation will discuss the reliability of commercially available enhancement mode gallium nitride transistors from EPC. To explain the devices’ reliability, this presentation will review how they operate and highlight both their similarities and differences versus today’s power MOSFETs. Additionally, this presentation will describe the reliability tests that were performed and the results achieved for EPC’s first-generation eGaN FETs.
Related Parts
| Imagen | Número de pieza del fabricante | Descripción | Voltaje de drenaje a fuente (Vdss) | Corriente - consumo continuo (Id) a 25ºC | Cantidad disponible | Precio | ||
|---|---|---|---|---|---|---|---|---|
 |  | EPC2001C | GANFET N-CH 100V 36A DIE OUTLINE | 100 V | 36A (Ta) | 50347 - Inmediata | $5.13 | Ver detalles |
|  | EPC2007C | GANFET N-CH 100V 6A DIE OUTLINE | 100 V | 6A (Ta) | 8309 - Inmediata | $2.64 | Ver detalles |
|  | EPC2010C | GANFET N-CH 200V 22A DIE OUTLINE | 200 V | 22A (Ta) | 2868 - Inmediata | $6.84 | Ver detalles |
|  | EPC2012C | GANFET N-CH 200V 5A DIE OUTLINE | 200 V | 5A (Ta) | 13109 - Inmediata | $3.18 | Ver detalles |
| | EPC2014C | GANFET N-CH 40V 10A DIE OUTLINE | 40 V | 10A (Ta) | 19041 - Inmediata | $1.89 | Ver detalles |
| | EPC2015C | GANFET N-CH 40V 53A DIE | 40 V | 53A (Ta) | 11914 - Inmediata | $5.06 | Ver detalles |
|  | EPC2016C | GANFET N-CH 100V 18A DIE | 100 V | 18A (Ta) | 32765 - Inmediata | $2.92 | Ver detalles |
|  | EPC8002 | GANFET N-CH 65V 2A DIE | 65 V | 2A (Ta) | 41140 - Inmediata | $3.77 | Ver detalles |
| | EPC8004 | GANFET N-CH 40V 4A DIE | 40 V | 4A (Ta) | 4101 - Inmediata | $3.68 | Ver detalles |
| | EPC8009 | GANFET N-CH 65V 4A DIE | 65 V | 4A (Ta) | 9917 - Inmediata | $3.95 | Ver detalles |
| | EPC8010 | GANFET N-CH 100V 4A DIE | 100 V | 4A (Ta) | 10160 - Inmediata | $2.64 | Ver detalles |
PTM Published on: 2011-04-06
PTM Updated on: 2016-03-30
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