Qorvo

QPD1014A 15 W GaN RF Input-Matched Transistor

The Qorvo QPD1014A 15 W GaN-on-SiC RF transistor operates from 30 MHz to 1200 MHz with 50 Ω input match, 50 V supply, and high efficiency (~70% PAE)

Image of Qorvo QPD1014A 15 W GaN RF Input-Matched TransistorThe Qorvo QPD1014A discrete GaN-on-SiC HEMT is designed for RF power applications requiring high efficiency and wideband performance. Operating from 30 MHz to 1200 MHz, it delivers up to 15 W (P3dB) output power on a 50 V supply. The device features an integrated input matching network for simplified design and consistent impedance performance across the band.

Its low thermal resistance package and compact 6 mm × 5 mm DFN footprint make it suitable for space-constrained designs. The transistor supports both continuous wave (CW) and pulsed operation, making it ideal for demanding environments such as radar and communication systems.

Features
  • Frequency range: 30 MHz to 1200 MHz
  • Typical PAE: ~70% at 1 GHz
  • Operating voltage: 50 V
  • Output power (P3dB): 12.5 W at 1 GHz
  • Integrated input matching to 50 Ω
  • Low thermal resistance, 6 mm × 5 mm leadless SMT package
  • CW and pulsed operation capability
Applications
  • Military and civilian radar systems
  • Land mobile and military radio communications
  • Wideband and narrowband RF power amplifiers
  • Electronic warfare and jamming systems
  • Test instrumentation requiring high-power RF output

QPD1014A 15 W GaN RF Input-Matched Transistor

ImagenNúmero de pieza del fabricanteDescripciónCantidad disponiblePrecioVer detalles
15W, 30-1200 MHZ, GAN RF INPUT-MQPD1014ASR15W, 30-1200 MHZ, GAN RF INPUT-M0 - Inmediata$102.47Ver detalles
15W, 30-1200 MHZ, GAN RF INPUT-MQPD1014ATR715W, 30-1200 MHZ, GAN RF INPUT-M0 - Inmediata$73.64Ver detalles

Evaluation Board

ImagenNúmero de pieza del fabricanteDescripciónCantidad disponiblePrecioVer detalles
EVAL BOARD FOR 15W, 30-1200 MHZ,QPD1014AEVBEVAL BOARD FOR 15W, 30-1200 MHZ,0 - Inmediata$719.79Ver detalles
Publicado: 2025-12-04