Name: SQJ182EP-T1_GE3
Brand: Vishay Siliconix
SKU: 742-SQJ182EP-T1_GE3TR-ND
Price: 2.5773 EUR
Availability: OutOfStock

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SQJ182EP-T1_GE3
cms-digikey-product-number	742-SQJ182EP-T1_GE3TR-ND - Tape & Reel (TR) 742-SQJ182EP-T1_GE3CT-ND - Cut Tape (CT) 742-SQJ182EP-T1_GE3DKR-ND - Digi-Reel®
cms-manufacturer	Vishay Siliconix
cms-manufacturer-product-number	SQJ182EP-T1_GE3
cms-description	AUTOMOTIVE N-CHANNEL 80 V (D-S)
cms-standard-lead-time	39 Weeks
cms-customer-reference
cms-detailed-description	N-Channel 80 V 210A (Tc) 395W (Tc) Surface Mount PowerPAK® SO-8
Datasheet	Datasheet
cms-eda-cad-models	SQJ182EP-T1_GE3 Models

cms-product-attributes

cms-type	cms-description	cms-select-all
cms-category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	210A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	96 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5392 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	395W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	Automotive
Qualification	AEC-Q101
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8