Name: SIS903DN-T1-GE3
Brand: Vishay Siliconix
SKU: SIS903DN-T1-GE3TR-ND
Price: 1.8876 EUR
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SIS903DN-T1-GE3
DigiKey Part Number	SIS903DN-T1-GE3TR-ND - Tape & Reel (TR) SIS903DN-T1-GE3CT-ND - Cut Tape (CT) SIS903DN-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIS903DN-T1-GE3
Description	MOSFET 2P-CH 20V 6A PPAK 1212
Manufacturer Standard Lead Time	38 Weeks
Customer Reference
Detailed Description	Mosfet Array 20V 6A (Tc) 2.6W (Ta), 23W (Tc) Surface Mount PowerPAK® 1212-8 Dual
Datasheet	Datasheet
EDA/CAD Models	SIS903DN-T1-GE3 Models

Product Attributes

Filter Similar Products

Show Empty Attributes

Category Discrete Semiconductor Products Transistors FETs, MOSFETs FET, MOSFET Arrays	Vgs(th) (Max) @ Id 1V @ 250µA
Manufacturer Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
Series TrenchFET® Gen III	Input Capacitance (Ciss) (Max) @ Vds 2565pF @ 10V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Power - Max 2.6W (Ta), 23W (Tc)
Part Status Active	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Configuration 2 P-Channel (Dual)	Package / Case PowerPAK® 1212-8 Dual
Drain to Source Voltage (Vdss) 20V	Supplier Device Package PowerPAK® 1212-8 Dual
Current - Continuous Drain (Id) @ 25°C 6A (Tc)	Base Product Number SIS903
Rds On (Max) @ Id, Vgs 20.1mOhm @ 5A, 4.5V