Name: SIRS5100DP-T1-GE3
Brand: Vishay Siliconix
SKU: 742-SIRS5100DP-T1-GE3TR-ND
Price: 4.4891 EUR
Availability: InStock

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SIRS5100DP-T1-GE3
cms-digikey-product-number	742-SIRS5100DP-T1-GE3TR-ND - Tape & Reel (TR) 742-SIRS5100DP-T1-GE3CT-ND - Cut Tape (CT) 742-SIRS5100DP-T1-GE3DKR-ND - Digi-Reel®
cms-manufacturer	Vishay Siliconix
cms-manufacturer-product-number	SIRS5100DP-T1-GE3
cms-description	N-CHANNEL 100 V (D-S) MOSFET POW
cms-standard-lead-time	33 Weeks
cms-customer-reference
cms-detailed-description	N-Channel 100 V 39A (Ta), 225A (Tc) 7.4W (Ta), 240W (Tc) Surface Mount PowerPAK® SO-8
Datasheet	Datasheet
cms-eda-cad-models	SIRS5100DP-T1-GE3 Models

cms-type	cms-description	cms-select-all
cms-category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	39A (Ta), 225A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	2.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	102 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5400 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	7.4W (Ta), 240W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8
Base Product Number	SIRS5100

Unit Price without VAT:	3,71000 €
Unit Price with VAT:	4,48910 €

SIRS5100DP-T1-GE3