Name: SIJH112E-T1-GE3
Brand: Vishay Siliconix
SKU: 742-SIJH112E-T1-GE3TR-ND
Price: 4.9852 EUR
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SIJH112E-T1-GE3
DigiKey Part Number	742-SIJH112E-T1-GE3TR-ND - Tape & Reel (TR) 742-SIJH112E-T1-GE3CT-ND - Cut Tape (CT) 742-SIJH112E-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIJH112E-T1-GE3
Description	MOSFET N-CH 100V 23A/225A PPAK
Manufacturer Standard Lead Time	24 Weeks
Customer Reference
Detailed Description	N-Channel 100 V 23A (Ta), 225A (Tc) 3.3W (Ta), 333W (Tc) Surface Mount PowerPAK® 8 x 8
Datasheet	Datasheet
EDA/CAD Models	SIJH112E-T1-GE3 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	-
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	23A (Ta), 225A (Tc)
Rds On (Max) @ Id, Vgs	2.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	160 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	8050 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	3.3W (Ta), 333W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 8 x 8
Package / Case	8-PowerTDFN
Base Product Number	SIJH112