Name: SI2399DS-T1-GE3
Brand: Vishay Siliconix
SKU: SI2399DS-T1-GE3TR-ND
Price: 0.7986 EUR
Availability: InStock

Need Help?

Feedback

About DigiKey Marketplace Sell on DigiKey.com Careers Site Map Digital Solutions Newsroom

Help and Support Order Status Shipping Rates/Options Returns and Order Issues

Chat (+34) 960 029 708 spain.support@digikey.com Co-Browse

SI2399DS-T1-GE3
cms-digikey-product-number	SI2399DS-T1-GE3TR-ND - Tape & Reel (TR) SI2399DS-T1-GE3CT-ND - Cut Tape (CT) SI2399DS-T1-GE3DKR-ND - Digi-Reel®
cms-manufacturer	Vishay Siliconix
cms-manufacturer-product-number	SI2399DS-T1-GE3
cms-description	MOSFET P-CH 20V 6A SOT23-3
cms-standard-lead-time	27 Weeks
cms-customer-reference
cms-detailed-description	P-Channel 20 V 6A (Tc) 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
cms-datasheet	cms-datasheet
cms-eda-cad-models	SI2399DS-T1-GE3 Models

cms-type	cms-description	cms-select-all
cms-category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Rds On (Max) @ Id, Vgs	34mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 4.5 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	835 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	2.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3
Base Product Number	SI2399

Unit Price without VAT:	0,66000 €
Unit Price with VAT:	0,79860 €

SI2399DS-T1-GE3