Name: XPJR6604PB,LXHQ
Brand: Toshiba Semiconductor and Storage
SKU: 264-XPJR6604PBLXHQTR-ND
Price: 2.6136 EUR
Availability: InStock

N-Channel 40 V 200A (Ta) 375W (Tc) Surface Mount S-TOGL™

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

XPJR6604PB,LXHQ
DigiKey Part Number	264-XPJR6604PBLXHQTR-ND - Tape & Reel (TR) 264-XPJR6604PBLXHQCT-ND - Cut Tape (CT) 264-XPJR6604PBLXHQDKR-ND - Digi-Reel®
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	XPJR6604PB,LXHQ
Description	40V; UMOS9; 0.66MOHM; S-TOGL
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 40 V 200A (Ta) 375W (Tc) Surface Mount S-TOGL™
Datasheet	Datasheet
EDA/CAD Models	XPJR6604PB,LXHQ Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 3V @ 1mA
Mfr Toshiba Semiconductor and Storage	Gate Charge (Qg) (Max) @ Vgs 128 nC @ 10 V
Series U-MOSIX-H	Vgs (Max) ±20V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 11380 pF @ 10 V
Part Status Active	Power Dissipation (Max) 375W (Tc)
FET Type N-Channel	Operating Temperature 175°C
Technology MOSFET (Metal Oxide)	Grade Automotive
Drain to Source Voltage (Vdss) 40 V	Qualification AEC-Q101
Current - Continuous Drain (Id) @ 25°C 200A (Ta)	Mounting Type Surface Mount
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V	Supplier Device Package S-TOGL™
Rds On (Max) @ Id, Vgs 0.66mOhm @ 100A, 10V	Package / Case 5-PowerSFN