Name: TRS6E65F,S1Q
Brand: Toshiba Semiconductor and Storage
SKU: TRS6E65FS1Q-ND
Price: 4.961 EUR
Availability: OutOfStock

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TRS6E65F,S1Q
DigiKey Part Number	TRS6E65FS1Q-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TRS6E65F,S1Q
Description	DIODE SIL CARB 650V 6A TO220-2L
Manufacturer Standard Lead Time	24 Weeks
Customer Reference
Detailed Description	Diode 650 V 6A Through Hole TO-220-2L
Datasheet	Datasheet

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Category Discrete Semiconductor Products Diodes Rectifiers Single Diodes	Reverse Recovery Time (trr) 0 ns
Mfr Toshiba Semiconductor and Storage	Current - Reverse Leakage @ Vr 30 µA @ 650 V
Packaging Tube	Capacitance @ Vr, F 22pF @ 650V, 1MHz
Part Status Active	Mounting Type Through Hole
Technology SiC (Silicon Carbide) Schottky	Package / Case TO-220-2
Voltage - DC Reverse (Vr) (Max) 650 V	Supplier Device Package TO-220-2L
Current - Average Rectified (Io) 6A	Operating Temperature - Junction 175°C (Max)
Voltage - Forward (Vf) (Max) @ If 1.6 V @ 6 A	Base Product Number TRS6E65
Speed Zero Recovery Time > 500mA (Io)

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Unit Price without VAT:	4,10000 €
Unit Price with VAT:	4,96100 €

TRS6E65F,S1Q