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N-Channel 500 V 3.1A (Tc) 42W (Tc) Through Hole PG-TO251-3
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IPU50R1K4CEAKMA1

DigiKey Part Number
IPU50R1K4CEAKMA1-ND
Manufacturer
Manufacturer Product Number
IPU50R1K4CEAKMA1
Description
MOSFET N-CH 500V 3.1A TO251-3
Customer Reference
Detailed Description
N-Channel 500 V 3.1A (Tc) 42W (Tc) Through Hole PG-TO251-3
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Series
Packaging
Tube
Part Status
Obsolete
FET Type
Technology
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
13V
Rds On (Max) @ Id, Vgs
1.4Ohm @ 900mA, 13V
Vgs(th) (Max) @ Id
3.5V @ 70µA
Gate Charge (Qg) (Max) @ Vgs
8.2 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
178 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
42W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO251-3
Package / Case
Base Product Number
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Obsolete
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