N-Channel 650 V 25A (Tc) 208W (Tc) Through Hole PG-TO220-3
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IPP60R125CPXKSA1

DigiKey Part Number
IPP60R125CPXKSA1-ND
Manufacturer
Manufacturer Product Number
IPP60R125CPXKSA1
Description
MOSFET N-CH 650V 25A TO220-3
Customer Reference
Detailed Description
N-Channel 650 V 25A (Tc) 208W (Tc) Through Hole PG-TO220-3
Datasheet
 Datasheet
EDA/CAD Models
IPP60R125CPXKSA1 Models
Product Attributes
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Category
Vgs(th) (Max) @ Id
3.5V @ 1.1mA
Mfr
Gate Charge (Qg) (Max) @ Vgs
70 nC @ 10 V
Series
Vgs (Max)
±20V
Packaging
Tube
Input Capacitance (Ciss) (Max) @ Vds
2500 pF @ 100 V
Part Status
Not For New Designs
Power Dissipation (Max)
208W (Tc)
FET Type
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
650 V
Supplier Device Package
PG-TO220-3
Current - Continuous Drain (Id) @ 25°C
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
Rds On (Max) @ Id, Vgs
125mOhm @ 16A, 10V
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (8)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
AOT42S60LAlpha & Omega Semiconductor Inc.3.045785-1515-5-ND6,66000 €Similar
IRF830APBFVishay Siliconix1.719IRF830APBF-ND2,63000 €Similar
IRFBC30APBFVishay Siliconix732IRFBC30APBF-ND3,40000 €Similar
R6024VNX3C16Rohm Semiconductor1.055846-R6024VNX3C16-ND5,52000 €Similar
SIHP30N60E-E3Vishay Siliconix0742-SIHP30N60E-E3-ND2,81402 €Similar
In-Stock: 2.332
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All prices are in EUR
Tube
QuantityUnit PriceExt Price
15,40000 €5,40 €
502,85020 €142,51 €
1002,60390 €260,39 €
5002,17256 €1.086,28 €
1.0002,03411 €2.034,11 €
2.0001,95998 €3.919,96 €
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:5,40000 €
Unit Price with VAT:6,53400 €