Name: DMN10H099SFG-13
Brand: Diodes Incorporated
SKU: DMN10H099SFG-13-ND
Price: 0.23821 EUR
Availability: OutOfStock

DMN10H099SFG-13 is available for purchase but is not normally stocked.

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Parametric Equivalent

Diodes Incorporated

In Stock: 1.611

Unit Price: 0,79000 €

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

DMN10H099SFG-13
DigiKey Part Number	DMN10H099SFG-13-ND - Tape & Reel (TR)
Manufacturer	Diodes Incorporated
Manufacturer Product Number	DMN10H099SFG-13
Description	MOSFET N-CH 100V 4.2A PWRDI3333
Manufacturer Standard Lead Time	12 Weeks
Customer Reference
Detailed Description	N-Channel 100 V 4.2A (Ta) 980mW (Ta) Surface Mount POWERDI3333-8
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Diodes Incorporated
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	80mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	25.2 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1172 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	980mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	POWERDI3333-8
Package / Case	8-PowerVDFN
Base Product Number	DMN10