onsemi

1200 V Silicon Carbide (EliteSiC) MOSFETs

onsemi's EliteSiC MOSFETs provide high efficiency, increased power density, and reduced system size

Image of onsemi's 1200 V Silicon Carbide (SiC) MOSFET onsemi's 1200 V EliteSiC MOSFETs use a technology that provides superior switching performance and higher reliability compared to silicon. The low ON resistance and compact chip size ensure low capacitance and gate charge. System benefits include high efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Features
  • 1200 V rated
  • Low ON resistance 
  • Compact chip size ensure low capacitance and gate charge
  • High-speed switching and low capacitance
  • 100% UIL tested
  • Qualified for automotive according to AEC-Q101
Applications
  • PFC
  • OBC
  • Boost inverters
  • PV chargers
  • Automotive DC/DC converters for EV/PHEV
  • Automotive onboard chargers
  • Automotive auxiliary motor drives
  • Solar inverters
  • Network power supplies
  • Server power supplies

Other Wide Bandgap Solutions

ImageManufacturer Part NumberDescriptionAvailable QuantityPriceView Details
DIODE SIL CARB 1700V 25A TO2472NDSH25170ADIODE SIL CARB 1700V 25A TO2472134 - Immediate$15.05View Details
DIODE SIL CARB 1200V 26A TO2472FFSH15120ADIODE SIL CARB 1200V 26A TO2472199 - Immediate$9.82View Details
DIODE SIC 1.2KV 22.5A TO252AAFFSD08120ADIODE SIC 1.2KV 22.5A TO252AA2633 - Immediate
5000 - Factory Stock		$5.54View Details
DGTL ISO 5KV 1CH GATE DVR 16SOICNCD57001DWR2GDGTL ISO 5KV 1CH GATE DVR 16SOIC1231 - Immediate$5.22View Details
DIODE SIL CARBIDE 650V 8A TO263FFSB0665BDIODE SIL CARBIDE 650V 8A TO263627 - Immediate$2.58View Details
IC GATE DRVR LOW-SIDE 24QFNNCP51705MNTXGIC GATE DRVR LOW-SIDE 24QFN961 - Immediate
114000 - Factory Stock		$4.91View Details
SICFET N-CH 1200V 44A TO247-3NTHL080N120SC1SICFET N-CH 1200V 44A TO247-30 - ImmediateSee Page for PricingView Details
Updated: 2020-04-07
Published: 2019-05-29

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