onsemi

NTBG040N120M3S 40 mΩ SiC MOSFET

onsemi’s M3S MOSFET achieves peak efficiency with an 18 V gate drive and retains satisfactory performance at 15 V

Image of onsemi's NTBG040N120M3S 40 mΩ SiC MOSFETonsemi’s 1200 V M3S silicon carbide (SiC) MOSFET leverages planar technology for robust operation under negative gate voltage and transient gate voltage excursions. It achieves peak efficiency with an 18 V gate drive but retains satisfactory performance at 15 V.

Features
  • D2PAK-7L package with Kelvin source configuration
  • Excellent figure of merit (FOM) (= RDS(ON) x EOSS)
  • Ultra-low gate charge (QG(TOT) = 75 nC)
  • High-speed switching with low capacitance (COSS = 80 pF
  • 15 V to 18 V gate drive
  • M3S technology: 40 mΩ RDS(ON) with low EON and EOFF losses
  • 100% avalanche tested
  • Halide-free and RoHS compliant
Applications
  • Industrial

NTBG040N120M3S 40 mΩ SiC MOSFET

ImageManufacturer Part NumberDescriptionAvailable QuantityPriceView Details
SILICON CARBIDE (SIC) MOSFET - ENTBG040N120M3SSILICON CARBIDE (SIC) MOSFET - E863 - Immediate$9.70View Details
Published: 2024-02-08