NextPowerS3 High-Performance MOSFETs
Nexperia’s efficient 25 V, 30 V, and 40 V MOSFETs with a SchottkyPlus body diode delivers low-spiking and low IDSS leakage
Nexperia’s NextPowerS3 high-performance 25 V, 30 V, and 40 V MOSFET platform incorporates superjunction technology with a copper-clip LFPAK package to deliver low RDS(on) and demonstrate a continuous current capability up to 380 A. These parameters, i.e., strong/realistic ID max rating, very strong SOA, and low RDS(on), working simultaneously, making for uniquely positioned high performance and highly reliable MOSFETs without compromise.
- Unique SchottkyPlus body diode delivers low-spiking and low IDSS leakage
- Logic-level and standard-level gate options available
- Massive SOA capability compared to leading competitors
- Balanced RDS(on) and QG for high-efficiency DC/DC
- 12 V servers and computing ORings and hot-swaps
- Synchronous rectifiers and fast-switching control FET
- Voltage regulators (VRM) and point-of-load (PoL) modules
- Brushed and BLDC motor controls
- USB PD VBUS switches, load switches, and battery protection




