NextPowerS3 High-Performance MOSFETs

Nexperia’s efficient 25 V, 30 V, and 40 V MOSFETs with a SchottkyPlus body diode delivers low-spiking and low IDSS leakage

Image of Nexperia's NextPowerS3 High-Performance MOSFETsNexperia’s NextPowerS3 high-performance 25 V, 30 V, and 40 V MOSFET platform incorporates superjunction technology with a copper-clip LFPAK package to deliver low RDS(on) and demonstrate a continuous current capability up to 380 A. These parameters, i.e., strong/realistic ID max rating, very strong SOA, and low RDS(on), working simultaneously, making for uniquely positioned high performance and highly reliable MOSFETs without compromise.

Features
  • Unique SchottkyPlus body diode delivers low-spiking and low IDSS leakage
  • Logic-level and standard-level gate options available
  • Massive SOA capability compared to leading competitors
  • Balanced RDS(on) and QG for high-efficiency DC/DC
Applications
  • 12 V servers and computing ORings and hot-swaps
  • Synchronous rectifiers and fast-switching control FET
  • Voltage regulators (VRM) and point-of-load (PoL) modules
  • Brushed and BLDC motor controls
  • USB PD VBUS switches, load switches, and battery protection
Published: 2022-03-18