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SQ2337ES-T1_GE3 P-Channel 80V 2.2A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)
Price & Procurement
11.101 In Stock
Can ship immediately
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 0,59000 0,59 €
10 0,50600 5,06 €
100 0,37780 37,78 €
500 0,29686 148,43 €
1.000 0,22940 229,40 €

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SQ2337ES-T1_GE3TR-ND
  • Minimum Quantity: 3.000
  • Quantity Available: 9.000 - Immediate
  • Unit Price: 0,20307 €
  • Digi-Reel®  : SQ2337ES-T1_GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 11.101 - Immediate
  • Unit Price: Digi-Reel®

SQ2337ES-T1_GE3

Datasheet
Digi-Key Part Number SQ2337ES-T1_GE3CT-ND
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Manufacturer

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Manufacturer Part Number SQ2337ES-T1_GE3
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Description MOSFET P-CHAN 80V SOT23
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

P-Channel 80V 2.2A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)

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Documents & Media
Datasheets SQ2337ES
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 290mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 620pF @ 30V
FET Feature -
Power Dissipation (Max) 3W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SQ2337ES-T1_GE3CT