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SIZ918DT-T1-GE3 Mosfet Array 2 N-Channel (Half Bridge) 30V 16A, 28A 29W, 100W Surface Mount 8-PowerPair® (6x5)
Price & Procurement
17.766 In Stock
Can ship immediately
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 1,08000 €1,08
10 0,96600 €9,66
25 0,91720 €22,93
100 0,75330 €75,33
500 0,62232 €311,16
1.000 0,49130 €491,30

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SIZ918DT-T1-GE3TR-ND
  • Minimum Quantity: 3.000
  • Quantity Available: 15.000 - Immediate
  • Unit Price: 0,45854 €
  • Digi-Reel®  : SIZ918DT-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 17.766 - Immediate
  • Unit Price: Digi-Reel®

SIZ918DT-T1-GE3

Datasheet
Digi-Key Part Number SIZ918DT-T1-GE3CT-ND
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Manufacturer

Vishay Siliconix

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Manufacturer Part Number SIZ918DT-T1-GE3
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Description MOSFET 2N-CH 30V 16A POWERPAIR
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Manufacturer Standard Lead Time 8 Weeks
Detailed Description

Mosfet Array 2 N-Channel (Half Bridge) 30V 16A, 28A 29W, 100W Surface Mount 8-PowerPair® (6x5)

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Customer Reference
Documents & Media
Datasheets SIZ918DT
Featured Product PowerPAIR®
HTML Datasheet SIZ918DT
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type 2 N-Channel (Half Bridge)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 16A, 28A
Rds On (Max) @ Id, Vgs 12mOhm @ 13.8A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 790pF @ 15V
Power - Max 29W, 100W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Supplier Device Package 8-PowerPair® (6x5)
Base Part Number SIZ918
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SIZ918DT-T1-GE3CT