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SI7129DN-T1-GE3 P-Channel 30V 35A (Tc) 3.8W (Ta), 52.1W (Tc) Surface Mount PowerPAK® 1212-8
Price & Procurement
9.614 In Stock
Can ship immediately
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 0,88000 0,88 €
10 0,78800 7,88 €
100 0,61430 61,43 €
500 0,50744 253,72 €
1.000 0,40061 400,61 €

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Alternate Package
  • Tape & Reel (TR)  : SI7129DN-T1-GE3TR-ND
  • Minimum Quantity: 3.000
  • Quantity Available: 6.000 - Immediate
  • Unit Price: 0,36301 €
  • Digi-Reel®  : SI7129DN-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 9.614 - Immediate
  • Unit Price: Digi-Reel®

SI7129DN-T1-GE3

Datasheet
Digi-Key Part Number SI7129DN-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI7129DN-T1-GE3
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Description MOSFET P-CH 30V 35A 1212-8
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

P-Channel 30V 35A (Tc) 3.8W (Ta), 52.1W (Tc) Surface Mount PowerPAK® 1212-8

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Documents & Media
Datasheets SI7129DN
Video File MOSFET Technologies for Power Conversion
PCN Assembly/Origin Multiple Fabracation Changes09/Jul/2014
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
Gate Charge (Qg) (Max) @ Vgs 71nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 3345pF @ 15V
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 11.4mOhm @ 14.4A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250µA
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 3.8W (Ta), 52.1W (Tc)
Operating Temperature -50°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI7129DN-T1-GE3CT