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16.807 In Stock
Can ship immediately
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 1,05000 €1,05
10 0,94000 €9,40
25 0,89160 €22,29
100 0,73240 €73,24
500 0,60502 €302,51
1.000 0,47765 €477,65

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SI4483ADY-T1-GE3TR-ND
  • Minimum Quantity: 2.500
  • Quantity Available: 15.000 - Immediate
  • Unit Price: 0,44581 €
  • Digi-Reel®  : SI4483ADY-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 16.807 - Immediate
  • Unit Price: Digi-Reel®

SI4483ADY-T1-GE3

Datasheet
Digi-Key Part Number SI4483ADY-T1-GE3CT-ND
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Manufacturer

Vishay Siliconix

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Manufacturer Part Number SI4483ADY-T1-GE3
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Description MOSFET P-CH 30V 19.2A 8SO
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Manufacturer Standard Lead Time 8 Weeks
Detailed Description

P-Channel 30V 19.2A (Tc) 2.9W (Ta), 5.9W (Tc) Surface Mount 8-SO

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Customer Reference
Documents & Media
Datasheets SI4483ADY
PCN Assembly/Origin Wafer Site 12/Sep/2018
HTML Datasheet SI4483ADY
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 19.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.8mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 135nC @ 10V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 3900pF @ 15V
FET Feature -
Power Dissipation (Max) 2.9W (Ta), 5.9W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
Base Part Number SI4483
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI4483ADY-T1-GE3CT