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SI4431BDY-T1-E3 P-Channel 30V 5.7A (Ta) 1.5W (Ta) Surface Mount 8-SO
Price & Procurement
10.496 In Stock
Can ship immediately
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 0,84000 0,84 €
10 0,73900 7,39 €
100 0,56640 56,64 €
500 0,44774 223,87 €
1.000 0,35820 358,20 €

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SI4431BDY-T1-E3TR-ND
  • Minimum Quantity: 2.500
  • Quantity Available: 10.000 - Immediate
  • Unit Price: 0,31516 €
  • Digi-Reel®  : SI4431BDY-T1-E3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 10.496 - Immediate
  • Unit Price: Digi-Reel®

SI4431BDY-T1-E3

Datasheet
Digi-Key Part Number SI4431BDY-T1-E3CT-ND
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Manufacturer

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Manufacturer Part Number SI4431BDY-T1-E3
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Description MOSFET P-CH 30V 5.7A 8-SOIC
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

P-Channel 30V 5.7A (Ta) 1.5W (Ta) Surface Mount 8-SO

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Documents & Media
Datasheets SI4431BDY
Video File MOSFET Technologies for Power Conversion
EDA / CAD Models Download from Ultra Librarian
Catalog Page 1405 (EU2011-EN PDF)
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 5.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 30mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 1.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI4431BDY-T1-E3CT