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SI3473CDV-T1-GE3 P-Channel 12V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP
Price & Procurement
31.117 In Stock
Can ship immediately
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 0,64000 0,64 €
10 0,55700 5,57 €
100 0,42680 42,68 €
500 0,33736 168,68 €
1.000 0,26988 269,88 €

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Alternate Package
  • Tape & Reel (TR)  : SI3473CDV-T1-GE3TR-ND
  • Minimum Quantity: 3.000
  • Quantity Available: 30.000 - Immediate
  • Unit Price: 0,23746 €
  • Digi-Reel®  : SI3473CDV-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 31.117 - Immediate
  • Unit Price: Digi-Reel®

SI3473CDV-T1-GE3

Datasheet
Digi-Key Part Number SI3473CDV-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI3473CDV-T1-GE3
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Description MOSFET P-CH 12V 8A 6-TSOP
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

P-Channel 12V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP

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Documents & Media
Datasheets SI3473CDV
Video File MOSFET Technologies for Power Conversion
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
Gate Charge (Qg) (Max) @ Vgs 65nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds 2010pF @ 6V
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 22mOhm @ 8.1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Vgs (Max) ±8V
FET Feature -
Power Dissipation (Max) 2W (Ta), 4.2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Resources
Standard Package 1
Other Names SI3473CDV-T1-GE3CT