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SI2325DS-T1-GE3 P-Channel 150V 530mA (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
Price & Procurement
26.313 In Stock
Can ship immediately
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 0,82000 0,82 €
10 0,72900 7,29 €
25 0,69200 17,30 €
100 0,51900 51,90 €
500 0,43990 219,95 €
1.000 0,35835 358,35 €

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SI2325DS-T1-GE3TR-ND
  • Minimum Quantity: 3.000
  • Quantity Available: 21.000 - Immediate
  • Unit Price: 0,34748 €
  • Digi-Reel®  : SI2325DS-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 26.313 - Immediate
  • Unit Price: Digi-Reel®

SI2325DS-T1-GE3

Datasheet
Digi-Key Part Number SI2325DS-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI2325DS-T1-GE3
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Description MOSFET P-CH 150V 0.53A SOT-23
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

P-Channel 150V 530mA (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

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Documents & Media
Datasheets SI2325DS
Video File MOSFET Technologies for Power Conversion
HTML Datasheet SI2325DS
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) @ 25°C 530mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 510pF @ 25V
FET Feature -
Power Dissipation (Max) 750mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
Base Part Number SI2325
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI2325DS-T1-GE3CT