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SI2316DS-T1-E3 N-Channel 30V 2.9A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)
Price & Procurement
37.998 In Stock
Can ship immediately
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 0,61000 0,61 €
10 0,53200 5,32 €
100 0,40820 40,82 €
500 0,32274 161,37 €
1.000 0,25819 258,19 €

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SI2316DS-T1-E3TR-ND
  • Minimum Quantity: 3.000
  • Quantity Available: 36.000 - Immediate
  • Unit Price: 0,22717 €
  • Digi-Reel®  : SI2316DS-T1-E3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 37.998 - Immediate
  • Unit Price: Digi-Reel®

SI2316DS-T1-E3

Datasheet
Digi-Key Part Number SI2316DS-T1-E3CT-ND
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Manufacturer

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Manufacturer Part Number SI2316DS-T1-E3
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Description MOSFET N-CH 30V 2.9A SOT23-3
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

N-Channel 30V 2.9A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)

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Documents & Media
Datasheets SI2316DS
Video File MOSFET Technologies for Power Conversion
Catalog Page 1401 (EU2011-EN PDF)
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 50mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id 800mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 215pF @ 15V
FET Feature -
Power Dissipation (Max) 700mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI2316DS-T1-E3CT