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SI2301BDS-T1-E3 P-Channel 20V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)
Price & Procurement
103.966 In Stock
Can ship immediately
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 0,33000 0,33 €
10 0,26400 2,64 €
100 0,18000 18,00 €
500 0,13494 67,47 €
1.000 0,10121 101,21 €

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Alternate Package
  • Tape & Reel (TR)  : SI2301BDS-T1-E3TR-ND
  • Minimum Quantity: 3.000
  • Quantity Available: 102.000 - Immediate
  • Unit Price: 0,09007 €
  • Digi-Reel®  : SI2301BDS-T1-E3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 103.966 - Immediate
  • Unit Price: Digi-Reel®

SI2301BDS-T1-E3

Datasheet
Digi-Key Part Number SI2301BDS-T1-E3CT-ND
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Manufacturer

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Manufacturer Part Number SI2301BDS-T1-E3
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Description MOSFET P-CH 20V 2.2A SOT23-3
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

P-Channel 20V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)

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Documents & Media
Datasheets SI2301BDS
Video File MOSFET Technologies for Power Conversion
EDA / CAD Models Download from Ultra Librarian
Catalog Page 1404 (EU2011-EN PDF)
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
Gate Charge (Qg) (Max) @ Vgs 10nC @ 4,5V
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 375pF @ 6V
Rds On (Max) @ Id, Vgs 100mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250µA
Vgs (Max) ±8V
FET Feature -
Power Dissipation (Max) 700mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI2301BDS-T1-E3CT