SI1025X-T1-GE3 Mosfet Array 2 P-Channel (Dual) 60V 190mA 250mW Surface Mount SC-89 (SOT-563F)
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17.997 In Stock
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Price Break Unit Price Extended Price
1 0,46000 €0,46
10 0,39400 €3,94
100 0,29370 €29,37
500 0,23074 €115,37
1.000 0,17830 €178,30

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€0,46000

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€0,55660

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Alternate Package
  • Tape & Reel (TR)  : SI1025X-T1-GE3TR-ND
  • Minimum Quantity: 3.000
  • Quantity Available: 15.000 - Immediate
  • Unit Price: €0,16257
  • Digi-Reel®  : SI1025X-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 17.997 - Immediate
  • Unit Price: Digi-Reel®

SI1025X-T1-GE3

Datasheet
Digi-Key Part Number SI1025X-T1-GE3CT-ND
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Manufacturer

Vishay Siliconix

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Manufacturer Part Number SI1025X-T1-GE3
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Description MOSFET 2P-CH 60V 0.19A SC-89
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Detailed Description

Mosfet Array 2 P-Channel (Dual) 60V 190mA 250mW Surface Mount SC-89 (SOT-563F)

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Customer Reference
Documents & Media
Datasheets SI1025X
Environmental Information Material Compliance
REACH 211 Cert, SVHC
PCN Design/Specification Mult Dev Material Chgs 1/Jul/2021
HTML Datasheet SI1025X
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 190mA
Rds On (Max) @ Id, Vgs 4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.7nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds 23pF @ 25V
Power - Max 250mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package SC-89 (SOT-563F)
Base Part Number SI1025
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI1025X-T1-GE3CT