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IRF5305PBF P-Channel 55V 31A (Tc) 110W (Tc) Through Hole TO-220AB
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All prices are in EUR.
Price Break Unit Price Extended Price
1 1,09000 €1,09
10 0,97200 €9,72
25 0,92240 €23,06
100 0,75770 €75,77
500 0,62592 €312,96
1.000 0,50130 €501,30

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IRF5305PBF

Datasheet
Digi-Key Part Number IRF5305PBF-ND
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Manufacturer

Infineon Technologies

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Manufacturer Part Number IRF5305PBF
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Description MOSFET P-CH 55V 31A TO220AB
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Detailed Description

P-Channel 55V 31A (Tc) 110W (Tc) Through Hole TO-220AB

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Customer Reference
Documents & Media
Datasheets IRF5305PbF
Other Related Documents IR Part Numbering System
Product Training Modules High Voltage Integrated Circuits (HVIC Gate Drivers)
Featured Product Data Processing Systems
PCN Design/Specification Mult Dev No Format/Barcode Label 15/Jan/2019
Mult Dev Label Chgs Aug/2020
PCN Assembly/Origin Mult Dev Wafer Site Chg 18/Dec/2020
PCN Packaging Barcode Label Update 24/Feb/2017
EDA / CAD Models IRF5305PBF by SnapEDA
Simulation Models IRF5305PBF Saber Model
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tube 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
FET Feature -
Power Dissipation (Max) 110W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Part Number IRF5305
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 50
Other Names *IRF5305PBF
94-4306PBF
94-4306PBF-ND
SP001564354