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Price & Procurement
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 18,00000 18,00 €
10 16,59800 165,98 €
25 15,85200 396,30 €
240 14,17338 3.401,61 €

Submit a request for quotation on quantities greater than those displayed.

Product Overview
Digi-Key Part Number IPW65R019C7FKSA1-ND
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Quantity Available 0
Manufacturer

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Manufacturer Part Number

IPW65R019C7FKSA1

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Description MOSFET N-CH 650V 75A TO247-3
Copy   MOSFET N-CH 650V 75A TO247-3
Manufacturer Standard Lead Time 26 Weeks
Detailed Description

N-Channel 650V 75A (Tc) 446W (Tc) Through Hole PG-TO247-3

Copy   N-Channel 650V 75A (Tc) 446W (Tc) Through Hole PG-TO247-3
Documents & Media
Datasheets IPW65R019C7
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
PCN Assembly/Origin Wafer Process Update 28/Sep/2016
Simulation Models CoolMOS™ Power MOSFET 650V C7 Spice Model
Product Attributes Select All
Categories
Manufacturer Infineon Technologies
Series CoolMOS™ C7
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 19mOhm @ 58.3A, 10V
Vgs(th) (Max) @ Id 4V @ 2.92mA
Gate Charge (Qg) (Max) @ Vgs 215nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9900pF @ 400V
FET Feature -
Power Dissipation (Max) 446W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3
Package / Case TO-247-3
 
Environmental & Export Classifications
Lead Free Status Lead free
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package ? 240
Other Names SP000928646

16:05:47 7/22/2019