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585 In Stock
Can ship immediately
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 17,79000 17,79 €
10 16,40800 164,08 €
25 15,66960 391,74 €
100 13,82630 1.382,63 €
250 12,90452 3.226,13 €
500 11,79840 5.899,20 €
1.000 11,61405 11.614,05 €
2.500 11,33753 28.343,82 €
5.000 11,06100 55.305,02 €

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IPW65R019C7FKSA1

Datasheet
Digi-Key Part Number IPW65R019C7FKSA1-ND
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Manufacturer

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Manufacturer Part Number IPW65R019C7FKSA1
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Description MOSFET N-CH 650V 75A TO247-3
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Manufacturer Standard Lead Time 18 Weeks
Detailed Description

N-Channel 650V 75A (Tc) 446W (Tc) Through Hole PG-TO247-3

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Documents & Media
Datasheets IPW65R019C7
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
PCN Assembly/Origin Wafer Process Update 28/Sep/2016
Simulation Models CoolMOS™ Power MOSFET 650V C7 Spice Model
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series CoolMOS™ C7
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 19mOhm @ 58.3A, 10V
Vgs(th) (Max) @ Id 4V @ 2.92mA
Gate Charge (Qg) (Max) @ Vgs 215nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9900pF @ 400V
FET Feature -
Power Dissipation (Max) 446W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3
Package / Case TO-247-3
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 30
Other Names SP000928646