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Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 7,06000 7,06 €
10 6,35300 63,53 €
100 5,22400 522,40 €
500 4,37692 2.188,46 €
1.000 3,81214 3.812,14 €

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Product Overview
Digi-Key Part Number IPT020N10N3ATMA1CT-ND
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Quantity Available 0
Manufacturer

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Manufacturer Part Number

IPT020N10N3ATMA1

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Description MOSFET N-CH 100V 300A 8HSOF
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Detailed Description

N-Channel 100V 300A (Tc) 375W (Tc) Surface Mount PG-HSOF-8-1

Copy   N-Channel 100V 300A (Tc) 375W (Tc) Surface Mount PG-HSOF-8-1
Documents & Media
Datasheets IPT020N10N3 Preliminary
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
PCN Packaging Mult Dev Pkg Box Chg 3/Jan/2018
Simulation Models MOSFET OptiMOS™ 100V N-Channel Spice Model
Product Attributes Select All
Categories
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging ? Cut Tape (CT) ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 300A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 2mOhm @ 150A, 10V
Vgs(th) (Max) @ Id 3.5V @ 272µA
Gate Charge (Qg) (Max) @ Vgs 156nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 11200pF @ 50V
FET Feature -
Power Dissipation (Max) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-HSOF-8-1
Package / Case 8-PowerSFN
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package ? 1
Other Names IPT020N10N3ATMA1CT
Alternate Package | This part is also available in the following packaging:

10:29:35 5/20/2019