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IPG20N10S4L35ATMA1 Mosfet Array 2 N-Channel (Dual) 100V 20A 43W Surface Mount PG-TDSON-8-4
Price & Procurement
14.501 In Stock
Can ship immediately
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 1,00000 1,00 €
10 0,89300 8,93 €
100 0,69570 69,57 €
500 0,57474 287,37 €
1.000 0,45374 453,74 €

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : IPG20N10S4L35ATMA1TR-ND
  • Minimum Quantity: 5.000
  • Quantity Available: 10.000 - Immediate
  • Unit Price: 0,39060 €

IPG20N10S4L35ATMA1

Datasheet
Digi-Key Part Number IPG20N10S4L35ATMA1CT-ND
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Manufacturer

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Manufacturer Part Number IPG20N10S4L35ATMA1
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Description MOSFET 2N-CH 8TDSON
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

Mosfet Array 2 N-Channel (Dual) 100V 20A 43W Surface Mount PG-TDSON-8-4

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Documents & Media
Datasheets IPG20N10S4L-35
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
PCN Obsolescence/ EOL Mult Dev Assembly Chg 4/Oct/2018
PCN Packaging Mult Dev Pkg Box Chg 3/Jan/2018
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Packaging Cut Tape (CT) 
Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 20A
Rds On (Max) @ Id, Vgs 35mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 2.1V @ 16µA
Gate Charge (Qg) (Max) @ Vgs 17.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1105pF @ 25V
Power - Max 43W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Supplier Device Package PG-TDSON-8-4
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names IPG20N10S4L35ATMA1CT