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BSC0504NSIATMA1 N-Channel 30V 21A (Ta), 72A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount PG-TDSON-8-6
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Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 0,64000 0,64 €
10 0,57400 5,74 €
25 0,54400 13,60 €
100 0,40800 40,80 €
250 0,40408 101,02 €
500 0,34582 172,91 €
1.000 0,28172 281,72 €
2.500 0,27783 694,57 €

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Alternate Package
  • Tape & Reel (TR)  : BSC0504NSIATMA1TR-ND
  • Minimum Quantity: 5.000
  • Quantity Available: 0
  • Unit Price: 0,25257 €

BSC0504NSIATMA1

Datasheet
Digi-Key Part Number BSC0504NSIATMA1CT-ND
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Manufacturer

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Manufacturer Part Number BSC0504NSIATMA1
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Description MOSFET N-CH 30V 21A TDSON-8
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Manufacturer Standard Lead Time 26 Weeks
Detailed Description

N-Channel 30V 21A (Ta), 72A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount PG-TDSON-8-6

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Documents & Media
Datasheets BSC0504NSI
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
PCN Packaging Mult Dev Pkg Box Chg 3/Jan/2018
Mult Dev Reel Design Chg 2/Dec/2019
Simulation Models MOSFET OptiMOS™ 30V N-Channel Spice Model
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 21A (Ta), 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 960pF @ 15V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 30W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-6
Package / Case 8-PowerTDFN
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names BSC0504NSIATMA1CT