1PMT59xxB Datasheet by ON Semiconductor

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© Semiconductor Components Industries, LLC, 2007
December, 2018 Rev. 5
1Publication Order Number:
1PMT5920B/D
1PMT5920B Series
3.2 Watt Plastic
Surface Mount
POWERMITE® Package
This complete new line of 3.2 Watt Zener Diodes are offered in
highly efficient micro miniature, space saving surface mount with its
unique heat sink design. The POWERMITE package has the same
thermal performance as the SMA while being 50% smaller in
footprint area and delivering one of the lowest height profiles
(1.1 mm) in the industry. Because of its small size, it is ideal for use
in cellular phones, portable devices, business machines and many
other industrial/consumer applications.
Features
Zener Breakdown Voltage: 6.2 47 V
DC Power Dissipation: 3.2 W with Tab 1 (Cathode) @ 75°C
Low Leakage < 5 mA
ESD Rating of Class 3 (> 16 kV) per Human Body Model
Low Profile Maximum Height of 1.1 mm
Integral Heat Sink/Locking Tabs
Full Metallic Bottom Eliminates Flux Entrapment
Small Footprint Footprint Area of 8.45 mm2
Supplied in 12 mm Tape and Reel
Lead Orientation in Tape: Cathode (Short) Lead to Sprocket Holes
POWERMITE is JEDEC Registered as DO216AA
Cathode Indicated by Polarity Band
These Devices are PbFree and are RoHS Compliant
Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MOUNTING POSITION: Any
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
PLASTIC SURFACE MOUNT
3.2 WATT ZENER DIODES
6.2 47 VOLTS
Device Package Shipping
ORDERING INFORMATION
12
1: CATHODE
2: ANODE
POWERMITE
CASE 457
1
2
MARKING DIAGRAM
1
CATHODE
2
ANODE
www.onsemi.com
1PMT59xxBT1G POWERMITE
(PbFree)
3000 / Tape &
Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
M = Date Code
xxB = Specific Device Code
(See Table on Page 2)
G=PbFree Package
M
xxB G
www onsem' com
Zener Voltage Regulator
IF
V
I
IR
IZT
VR
VZ
VF
1PMT5920B Series
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2
MAXIMUM RATINGS
Rating Symbol Value Unit
DC Power Dissipation @ TA = 25°C (Note 1)
Derate above 25°C
Thermal Resistance, JunctiontoAmbient
°PD°
RqJA
500
4.0
248
°mW
mW/°C
°C/W
Thermal Resistance, JunctiontoLead (Anode) RqJanode 35 °C/W
Maximum DC Power Dissipation (Note 2)
Thermal Resistance from JunctiontoTab (Cathode)
°PD°
RqJcathode
3.2
23
W
°C/W
Operating and Storage Temperature Range TJ, Tstg 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Mounted with recommended minimum pad size, PC board FR4.
2. At Tab (Cathode) temperature, Ttab = 75°C
ELECTRICAL CHARACTERISTICS (TL = 25°C unless
otherwise noted, VF = 1.5 V Max. @ IF = 200 mAdc for all types)
Symbol Parameter
VZReverse Zener Voltage @ IZT
IZT Reverse Current
ZZT Maximum Zener Impedance @ IZT
IZK Reverse Current
ZZK Maximum Zener Impedance @ IZK
IRReverse Leakage Current @ VR
VRReverse Voltage
IFForward Current
VFForward Voltage @ IF
ELECTRICAL CHARACTERISTICS (TL = 30°C unless otherwise noted, VF = 1.25 Volts @ 200 mA)
Device*
Device
Marking
Zener Voltage (Note 3)
IZT IR @ VRVR
ZZT @ IZT
(Note 4)
ZZK @ IZK
(Note 4) IZK
VZ @ IZT (Volts)
Min Nom Max (mA) (mA) (V) (W) (W)(mA)
1PMT5920BT1G 20B 5.89 6.2 6.51 60.5 5.0 4.0 2.0 200 1.0
1PMT5921BT1G 21B 6.46 6.8 7.14 55.1 5.0 5.2 2.5 200 1.0
1PMT5924BT1G 24B 8.64 9.1 9.56 41.2 5.0 7.0 4.0 500 0.5
1PMT5927BT1G 27B 11.4 12 12.6 31.2 1.0 9.1 6.5 550 0.25
1PMT5929BT1G 29B 14.25 15 15.75 25 1.0 11.4 9.0 600 0.25
1PMT5933BT1G 33B 20.9 22 23.1 17 1.0 16.7 17.5 650 0.25
1PMT5934BT1G 34B 22.8 24 25.2 15.6 1.0 18.2 19 700 0.25
1PMT5935BT1G 35B 25.65 27 28.35 13.9 1.0 20.6 23 700 0.25
1PMT5941BT1G 41B 44.65 47 49.35 8.0 1.0 35.8 67 1000 0.25
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Zener voltage is measured with the device junction in thermal equilibrium with an ambient temperature of 25°C.
4. Zener Impedance Derivation ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The
specified limits are for IZ(ac) = 0.1 IZ(dc) with the ac frequency = 60 Hz.
1PMT5920B Series
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3
TYPICAL CHARACTERISTICS
7
5
3
2
Figure 1. Steady State Power Derating Figure 2. VZ to 10 Volts
25 50 75 100 125 175
3.5
2.5
2
1.5
1
0
T, TEMPERATURE (°C)
P , MAXIMUM POWER DISSIPATION (W)
D
0.1
56 910
VZ, ZENER VOLTAGE (VOLTS)
0.5
TL
2 4 6 8 10 12
10
8
6
4
2
0
2
4
VZ, ZENER VOLTAGE (VOLTS)
VZ @ IZT
200
100
70
50
30
20
10
10 20 30 50 70 100 200
VZ, ZENER VOLTAGE (VOLTS)
VZ @ IZT
150
3
78 11
1
10
100
IZ, ZENER CURRENT (mA)
Figure 3. VZ = 12 thru 47 Volts
0 10 20 30 40 50 60 70 80 90 100
VZ, ZENER VOLTAGE (VOLTS)
I , ZENER CURRENT (mA)
Z
100
50
30
20
10
1
0.5
0.3
0.2
0.1
2
5
3
Figure 4. Zener Voltage To 12 Volts
Figure 5. Zener Voltage 14 To 47 Volts Figure 6. Effect of Zener Voltage
VZ, ZENER VOLTAGE (VOLTS)
5 7 10 20 30 50 70 100
200
100
70
50
30
20
10
Z , DYNAMIC IMPEDANCE (OHMS)
Z
IZ(dc) = 1mA
20 mA iZ(rms) = 0.1 IZ(dc)
10 mA
qVZ, TEMPERATURE COEFFICIENT (mV/°C)
qVZ, TEMPERATURE COEFFICIENT (mV/°C)
MEASU MEASURED @ 50% Va
1PMT5920B Series
www.onsemi.com
4
TYPICAL CHARACTERISTICS
Figure 7. Effect of Zener Current
IZ, ZENER TEST CURRENT (mA)
1 k
500
200
100
50
20
10
5
2
1
0.5 1 2 5 10 20 50 100 200 500
Z , DYNAMIC IMPEDANCE (OHMS)
Z
TJ = 25°C
iZ(rms) = 0.1 IZ(dc)
22 V
12 V6.8 V
10,000
1000
100
10
110
VZ, REVERSE ZENER VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
MEASURED @ 50% VR
MEASURED @ 0 V BIAS
Figure 8. Capacitance versus Reverse
Zener Voltage
100
POWERMITE is a registered trademark of and used under a license from Microsemi Corporation.
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POWERMITE
CASE 45704
ISSUE F
DATE 14 MAY 2013
SCALE 4:1
M
XXXG
XXX = Specific Device Code
M = Date Code
G= PbFree Package
*This information is generic. Please refer to
device data sheet for actual part marking.
PbFree indicator, “G” or microdot “ G”,
may or may not be present.
GENERIC
MARKING DIAGRAMS*
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A1.75 2.05 0.069 0.081
B1.75 2.18 0.069 0.086
C0.85 1.15 0.033 0.045
D0.40 0.69 0.016 0.027
F0.70 1.00 0.028 0.039
H-0.05 +0.10 -0.002 +0.004
J0.10 0.25 0.004 0.010
K3.60 3.90 0.142 0.154
L0.50 0.80 0.020 0.031
R1.20 1.50 0.047 0.059
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS. MOLD
FLASH, PROTRUSIONS OR GATE BURRS SHALL
NOT EXCEED 0.15 (0.006) PER SIDE.
S
B
M
0.08 (0.003) C S
T
A
B
S
J
K
T
H
L
J
C
D
S
B
M
0.08 (0.003) C S
T
F
PIN 1
PIN 2
R
0.50 REF 0.019 REF
2.54
0.100
0.635
0.025
1.27
0.050
2.67
0.105 0.762
0.030
ǒmm
inchesǓ
SCALE 10:1
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 3
12
STYLE 1:
PIN 1. CATHODE
2. ANODE
STYLE 2:
PIN 1. ANODE OR CATHODE
2. CATHODE OR ANODE
(BIDIRECTIONAL)
STYLE 3:
PIN 1. ANODE
2. CATHODE M
XXXG
STYLE 2
12
M
XXXG
STYLE 1
12
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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1
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