BSS670S2L Datasheet by Infineon Technologies

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(ifineon - Pb-free lead plafing; RoHS compliant 4“ RoHS m ‘f “ Halo en
2012-03-29
Rev. 2.6 Page 1
BSS670S2L
OptiMOS Buck converter series
Product Summary
VDS 55 V
RDS(on) 650 m
ID0.54 A
Feature
N-Channel
Enhancement mode
Logic Level
PG-SOT 23
Gate
pin1
Drain
pin 3
Source
pin 2
Marking
BSs
Type Package Tape and Reel
BSS670S2L PG-SOT 23 H6327: 3000 pcs/reel
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
TA=25°C
TA=70°C
ID
0.54
0.43
A
Pulsed drain current
TA=25°C
ID puls 2.2
Gate source voltage VGS ± 20 V
Power dissipation
TA=25°C
Ptot 0.36 W
Operating and storage temperature Tj , Tstg -55... +150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Avalanche energy, single pulse ID = 0.54 A, RG = 25 1) EAS 8.1 mJ
Avalanche rated 1)
1)
Valid from devices with date code 0604 onwards
Qualified according to AEC Q101
Halogen-free according to IEC61249-2-21
ESD Class
JESD22-A114-HBM
Class 0
(ifineon
2012-03-29
Rev. 2.6 Page 2
BSS670S2L
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - soldering point
(Pin 3)
RthJS - - 290 K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 2)
RthJA
-
-
-
-
350
300
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0, ID=1mA
V(BR)DSS 55 - - V
Gate threshold voltage, VGS = VDS
ID=2.7µA
VGS(th) 1.2 1.6 2
Zero gate voltage drain current
VDS=55V, VGS=0, Tj=25°C
VDS=55V, VGS=0, Tj=150°C
IDSS
-
-
0.01
1
0.1
10
µA
Gate-source leakage current
VGS=20V, VDS=0V
IGSS -1 100 nA
Drain-source on-state resistance
VGS=4.5V, ID=270mA
RDS(on) -430 825 m
Drain-source on-state resistance
VGS=10V, ID=270mA
RDS(on) -346 650
2)
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
(ifineon
2012-03-29
Rev. 2.6 Page 3
BSS670S2L
Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance gfs VDS2*ID*RDS(on)max,
ID=0.54A
0.6 1.2 -S
Input capacitance Ciss VGS=0, VDS=25V,
f=1MHz
-56 75 pF
Output capacitance Coss -13 18
Reverse transfer capacitance Crss -7 10
Turn-on delay time td(on) VDD=30V, VGS=4.5V,
ID=0.54A,
RG=130
-9 14 ns
Rise time tr-25 37
Turn-off delay time td(off) -21 31
Fall time tf-24 32
Gate Charge Characteristics
Gate to source charge Qgs VDD=40V, ID=0.54A -0.19 0.25 nC
Gate to drain charge Qgd -0.57 0.86
Gate charge total QgVDD=40V, ID=0.54A,
VGS=0 to 10V
-1.7 2.26
Gate plateau voltage V(plateau) VDD=40V, ID=0.54A -3.1 -V
Reverse Diode
Inverse diode continuous
forward current
ISTA=25°C - - 0.38 A
Inv. diode direct current, pulsed ISM - - 2.2
Inverse diode forward voltage VSD VGS=0, IF=0.54A -0.8 1.1 V
Reverse recovery time trr VR=30V, IF=lS,
diF/dt=100A/µs
-51 64 ns
Reverse recovery charge Qrr -22 28 nC
(ifineon,
2012-03-29
Rev. 2.6 Page 4
BSS670S2L
1 Power dissipation
Ptot = f (TA)
0 20 40 60 80 100 120 °C 160
TA
0
0.04
0.08
0.12
0.16
0.2
0.24
0.28
0.32
W
0.38 BSS670S2L
Ptot
2 Drain current
ID = f (TA)
parameter: VGS 10 V
0 20 40 60 80 100 120 °C 160
TA
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
A
0.6 BSS670S2L
ID
4 Transient thermal impedance
ZthJS = f (tp)
parameter : D = tp/T
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
K/W
BSS670S2L
ZthJS
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TA = 25 °C
10 -1 10 0 10 1 10 2
V
VDS
-3
10
-2
10
-1
10
0
10
1
10
A
BSS670S2L
ID
R DS(on) = V DS / I
D
DC
10 ms
1 ms
100 µs
tp = 23.0µs
(imneon
2012-03-29
Rev. 2.6 Page 5
BSS670S2L
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
00.5 11.5 22.5 33.5 4 V 5
VDS
0
0.5
1
1.5
2
A
3
ID
3V
3.5V
4V
4.5V
10V
6V
5V
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
00.2 0.4 0.6 0.8 A 1.2
ID
0
100
200
300
400
500
600
700
800
900
1000
1100
1200
m
1500
RDS(on)
3.5V
4V
4.5V
5V
6V
10V
7 Typ. transfer characteristics
ID= f ( VGS ); VDS 2 x ID x RDS(on)max
parameter: tp = 80 µs
00.5 11.5 22.5 33.5 4 V 5
VGS
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
A
2.2
ID
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: gfs
00.4 0.8 1.2 1.6 A 2.2
ID
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
S
2.2
gfs
(ifineon
2012-03-29
Rev. 2.6 Page 6
BSS670S2L
9 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 270 mA, VGS = 10 V
-60 -20 20 60 100 °C 180
Tj
0
200
400
600
800
1000
1200
1400
1600
m
1900 BSS670S2L
RDS(on)
typ
98%
10 Typ. gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS
-60 -20 20 60 100 °C 180
Tj
0
0.5
1
1.5
V
2.5
VGS(th)
2 µA
10 µA
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0, f=1 MHz
0 5 10 15 20 V30
VDS
0
10
1
10
2
10
3
10
pF
C
Ciss
Coss
Crss
12 Forward character. of reverse diode
IF = f (VSD)
parameter: Tj , tp = 80 µs
00.4 0.8 1.2 1.6 22.4 V3
VSD
-2
10
-1
10
0
10
1
10
A
BSS670S2L
IF
Tj = 25 °C typ
Tj = 25 °C (98%)
Tj = 150 °C typ
Tj = 150 °C (98%)
(imneon
2012-03-29
Rev. 2.6 Page 7
BSS670S2L
13 Typ. gate charge
VGS = f (QGate)
parameter: ID = 0.54 A pulsed
00.4 0.8 1.2 1.6 2nC 2.6
QGate
0
2
4
6
8
10
12
V
16 BSS670S2L
VGS
0,8 VDS max
DS max
V
0,2
14 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
parameter: ID=10 mA
-60 -20 20 60 100 °C 180
Tj
50
52
54
56
58
60
62
V
66 BSS670S2L
V(BR)DSS
(infineon e www.in1inecn.com .
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
2012-03-29
Rev. 2.6 Page 7
BSS670S2L

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