VSMB1940X01 Datasheet by Vishay Semiconductor Opto Division

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VSMB1940X01
www.vishay.com Vishay Semiconductors
Rev. 1.5, 30-Jun-16 1Document Number: 81933
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Speed Infrared Emitting Diode, 940 nm,
GaAlAs Double Hetero
DESCRIPTION
VSMB1940X01 is an infrared, 940 nm emitting diode in
GaAlAs Double Hetero technology with high radiant power
and high speed, molded in clear, untinted 0805 plastic
package for surface mounting (SMD).
FEATURES
Package type: surface mount
Package form: 0805
Dimensions (L x W x H in mm): 2 x 1.25 x 0.85
AEC-Q101 qualified
Peak wavelength: λp = 940 nm
High reliability
High radiant power
High radiant intensity
High speed
Angle of half sensitivity: ϕ = ± 60°
Low forward voltage
Suitable for high pulse current operation
0805 standard surface-mountable package
Floor life: 168 h, MSL 3, according to J-STD-020
Lead (Pb)-free reflow soldering
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
High speed IR data transmission
High power emitter for low space applications
High performance transmissive or reflective sensors
Note
Test conditions see table “Basic Characteristics“
Note
MOQ: minimum order quantity
21531
PRODUCT SUMMARY
COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns)
VSMB1940X01 6 ± 60 940 15
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VSMB1940X01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel 0805
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR5V
Forward current IF100 mA
Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA
Surge forward current tp = 100 μs IFSM 1A
Power dissipation PV160 mW
Junction temperature Tj100 °C
Operating temperature range Tamb -40 to +85 °C
Storage temperature range Tstg -40 to +100 °C
Soldering temperature According to Fig. 9, J-STD-020 Tsd 260 °C
Thermal resistance junction / ambient JESD 51 RthJA 270 K/W
VISHAY. em\ttertechsupgon@wshay,com www.v\shay,com/doc?91000
VSMB1940X01
www.vishay.com Vishay Semiconductors
Rev. 1.5, 30-Jun-16 2Document Number: 81933
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
21532 Tamb - Ambient Temperature (°C)
PV - Power Dissipation (mW)
0
20
40
60
80
100
120
140
160
180
0 102030405060708090100
RthJA = 270 K/W
21533
T
amb
- Ambient Temperature (°C)
I
F
- Forward Current (mA)
0
20
40
60
80
100
120
020406080100
R
thJA
= 270 K/W
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 100 mA, tp = 20 ms VF1.15 1.35 1.6 V
IF = 1 A, tp = 100 μs VF-2.2- V
Temperature coefficient of VF
IF = 1 mA TKVF --1.5-mV/K
IF = 100 mA TKVF --1.1-mV/K
Reverse current VR = 5 V IR- - 10 μA
Junction capacitance VR = 0 V, f = 1 MHz,
E = 0 mW/cm2CJ-70-pF
Radiant intensity IF = 100 mA, tp = 20 ms Ie3612mW/sr
IF = 1 A, tp = 100 μs Ie-60-mW/sr
Radiant power IF = 100 mA, tp = 20 ms φe-40-mW
Temperature coefficient of radiant
power
IF = 1 mA TKφe- -1.1 - %/K
IF = 100 mA TKφe- -0.51 - %/K
Angle of half intensity ϕ 60- deg
Peak wavelength IF = 30 mA λp- 940 - nm
Spectral bandwidth IF = 30 mA Δλ -25-nm
Temperature coefficient of λpIF = 30 mA TKλp-0.25- nm
Rise time IF = 100 mA, 20 % to 80 % tr-15-ns
Fall time IF = 100 mA, 20 % to 80 % tf-15-ns
Virtual source diameter d - 0.5 - mm
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VSMB1940X01
www.vishay.com Vishay Semiconductors
Rev. 1.5, 30-Jun-16 3Document Number: 81933
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 4 - Relative Forward Voltage vs. Ambient Temperature
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 6 - Relative Radiant Intensity vs. Ambient Temperature
Fig. 7 - Relative Radiant Power vs. Wavelength
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
1
10
100
1000
01 23
t
p
= 100 µs
t
p
/T= 0.001
V
F
- Forward Voltage (V)
21534
I
F
- Forward Current (mA)
90
92
94
96
98
100
102
104
106
108
110
- 40 - 20 0 20 40 60 80 100
Tamb - Ambient Temperature (°C)
VF, rel - Relative Forward Voltage (%)
I
F
= 100 mA
I
F
= 10 mA
I
F
= 1 mA
21443
t
p
= 20 ms
0.01
0.1
1
10
100
1 10 100 1000
20921
I
F
- Forward Pulse Current (mA)
I
e
- Radiant Intensity (mW/sr)
t
p
= 1 µs
40
60
80
100
120
140
160
180
- 60 - 40 - 20 0 20 40 60 80 100
Tamb - Ambient Temperature (°C)
Ie rel - Relative Radiant Intensity (%)
tp = 20 ms
IF = 1 mA
21444
IF = 100 mA
0
10
20
30
40
50
60
70
80
90
100
840 880 920 960 1000 1040
λ - Wavelength (nm)
21445
Φ
e rel
- Relative Radiant Power (%)
I
F
= 30 mA
0.4 0.2 0
I
e, rel
- Relative Radiant Intensity
0.6
0.9
0.8
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
ϕ - Angular Displacement
948013-1
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VSMB1940X01
www.vishay.com Vishay Semiconductors
Rev. 1.5, 30-Jun-16 4Document Number: 81933
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
REFLOW SOLDER PROFILE
Fig. 9 - Lead (Pb)-free Reflow Solder Profile
According to J-STD-020
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Time between soldering and removing from MBB must not
exceed the time indicated in J-STD-020:
Moisture sensitivity: level 3
Floor life: 168 h
Conditions: Tamb < 30 °C, RH < 60 %
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
PACKAGE DIMENSIONS in millimeters
20018
VISHAY. ‘ 0.2mm: M 55:505 2:505 [mm ‘m ,mm w ww % Z? * ~ , %~’ 351295 17§ —V x m i N , ifigi , 7 N g 7T7 ‘ \ ‘ aifl , Anode m 1‘“ A MS REel off dwredmn 6% mm drawn mmmq m nw spmhtahnns Drawmgiho 9" \ssue 1 ZBDZC‘ MT mdwtafed To‘erantes :01 em\fleflechsuggorl@wshay.com www.v\shay.com/doc?91000
VSMB1940X01
www.vishay.com Vishay Semiconductors
Rev. 1.5, 30-Jun-16 5Document Number: 81933
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BLISTER TAPE DIMENSIONS in millimeters
21501
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VSMB1940X01
www.vishay.com Vishay Semiconductors
Rev. 1.5, 30-Jun-16 6Document Number: 81933
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
REEL DIMENSIONS in millimeters
of the wheel is supplier specific.
Form of the leave open
Issue: 2; 26.04.10
Drawing-No.: 9.800-5096.01-4
specifications
according to DIN
technical drawings
Ø 177.8 max.
Ø 55 min.
8.4 +2.5
8.4 +0.15
14.4 max.
Ø 13 + 0.5
- 0.2
1.5 min.
Ø 20.2 min.
Z
Z 2:1
20875
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Revision: 01-Jan-2021 1Document Number: 91000
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