SCS206AJ
SiC Schottky Barrier Diode
*1 T
c
=100°C, T
j
=150°C, Duty cycle=10% *2 T
c
=25°C
A
PW=10ms sinusoidal, T
j
=150°C
1.6
55 to 175
90
°C175
A
2
s
A
2
s
°C
2.6
Surge non-
repetitive forward
current
PW=10ms sinusoidal, T
j
=25°C
PW=10s square, T
j
=25°C
T
j
18
Range of storage temperature T
stg
i
2
t value PW=10ms, T
j
=25°C
PW=10ms, T
j
=150°C
i
2
dt
Absolute maximum ratings (T
j
= 25°C)
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Continuous forward current (T
c
=136°C)
UnitValue
Repetitive peak forward current
Total power dissipation
Junction temperature
V
R
I
F
I
FSM
I
FRM
P
D
650
650
6
26
48
23 A
A
V
RM
Embossed tape
330
Type
Packaging
Reel size (mm)
TLL
SCS206AJ
Basic ordering unit (pcs)
Tape width (mm) 24
1 000
Marking
Packing code
Features
9nC
1) Shorter recovery time
A
W
Symbol
PFC Boost Topology
Secondary Side Rectification
Data Center
PV Power Conditioners
Parameter
V
V
A
3) High-speed switching possible
Outline
Inner circuit
Packaging specifications
LPT(L)
<TO-263AB>
2) Reduced temperature dependence
650V
6A
Applications
V
R
I
F
Q
C
*1
*2
(3)
(1)
(4)
(2)
(1) Cathode
(2) N / C
(3) Cathode
(4) Anode
(2) (3) (4)
(1)
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Datasheet
SCS206AJ
3.1 °C/WThermal resistance R
th(j-c)
--2.3
Thermal characteristics
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
Q
C
220
V
R
=600V,f=1MHz -
V
R
=400V,di/dt=350A/s
-
9--
pF22
-ns
pF
V
R
=1V,f=1MHz
A
V
R
=600V,T
j
=25°C
V
1.2
1.63
I
F
=6A,T
j
=175°C
V
R
=600V,T
j
=175°C
V
120-
-
-
1.35
-
-
A
18 - A
-42
V
R
=600V,T
j
=150°C
Electrical characteristics (T
j
= 25°C)
650
V
DC
I
R
=1.2mA
Parameter Conditions
DC blocking voltage
Forward voltage
Typ.
I
F
=6A,T
j
=25°C
Symbol
V
F
I
F
=6A,T
j
=150°C -1.55
Unit
Max.Min.
Values
-
-
1.55
V
-V
-
-
-
Typical Transient Thermal Characteristics
Symbol Value Unit Symbol Value Unit
Reverse current
Total capacitance
Total capacitive charge
12
nC
Switching time t
C
V
R
=400V,di/dt=350A/s
-
I
R
C
Ws/K
R
th2
1.53E+00 C
th2
4.56E-04
R
th3
5.41E-01 C
th3
1.28E-02
R
th1
2.28E-01
K/W
C
th1
1.05E-03
PD
TjTc
Ta
Rth,n
Rth1
Cth1 Cth2 Cth,n
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Datasheet
:J//
SCS206AJ
Electrical characteristic curves
 
Fig.3 VR -I
RCharacteristics
0.001
0.01
0.1
1
10
100
1000
0 200 400 600
Ta=125ºC
Ta=175ºC
Ta=75ºC
Ta=25ºC
Ta= 25ºC
0.001
0.01
0.1
1
10
100
0.0 0.5 1.0 1.5 2.0 2.5
Pulsed
Ta=125ºC
Ta=175ºC
Ta=75ºC
Ta=25ºC
Ta= 25ºC
0
1
2
3
4
5
6
7
8
9
0.0 0.5 1.0 1.5 2.0 2.5
Pulsed
Ta=125ºC
Ta=175ºC
Ta=75ºC
Ta=25ºC
Ta= 25ºC
1
10
100
1000
0.01 0.1 1 10 100 1000
Ta=25ºC
f=1MHz
Fig.1 VF -I
FCharacteristics
Forward Current : IF[A]
Forward Voltage : VF[V]
Fig.2 VF -I
FCharacteristics
Forward Current : IF[A]
Forward Voltage : VF[V]
Reverse Current : IR[A]
Reverse Voltage : VR[V]
Fig.4 VR -C
tCharacteristics
Capacitance Between Terminals : Ct[pF]
Reverse Voltage : VR[V]
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Datasheet
SCS206AJ
Electrical characteristic curves
0.01
0.1
1
10
1.E-4 1.E-3 1.E-2 1.E-1 1.E+0 1.E+1 1.E+2 1.E+3
Ta=25ºC
Single Pulse
0
5
10
15
20
25
30
35
40
45
50
25 50 75 100 125 150 175
0
10
20
30
40
50
60
70
25 50 75 100 125 150 175
Duty=0.1
Duty=0.2
Duty=0.5
Duty=0.8 D.C.
Fig.5 Typical Transient Thermal Resistance
vs. Pulse Width
Transient Thermal Resistance : Rth(j-c) [ºC/W]
Pulse Width : PW [s]
Fig.6 Power Dissipation
Power Dissipation [W]
Case Temperature : Tc[ºC]
Peak Forward Current : IP[A]
Case Temperature : Tc[ºC]
0
10
20
30
40
50
60
70
25 50 75 100 125 150 175
Duty=0.1
Duty=0.2
Duty=0.5
Duty=0.8 D.C.
Fig.7*3Maximum peak forward current
derating curve IP-T
c
Fig.8*4Typical peak forward current
derating curve IP-T
c(Not guaranteed)
*3 Based on max Vf, max Rth(j-c)
Valid for switching of above 10kHz,
excluding D.C. curve.
*4 Based on typ Vf, typ Rth(j-c)
Typical value, not guaranteed
Valid for switching of above 10kHz,
excluding D.C. curve
Peak Forward Current : IP[A]
Case Temperature : Tc[ºC]
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Datasheet
SCS206AJ
Electrical characteristic curves
Symplified forward characteristic model
A
12
/°C
2
a
1
b
0
b
1
b
2
1.80E-06
V/°C
/°C
Symbol
a
0
Typical Value
9.35E-01
-1.12E-03
6.63E-02
1.70E-04
Unit
V
10
100
1000
1.E-5 1.E-4 1.E-3 1.E-2
Ta=25ºC
Single Pulse 0
1
2
3
4
5
6
0 200 400 600
Fig.9 Surge non-repetitive forward current
vs. Pulse width (Sinusoidal waveform)
Surge non-repetitive forward current : IFSM [A]
Pulse Width : PW [s]
Fig.10 Typical capacitance store energy
Capacitance stored energy : EC[J]
Reverse Voltage : VR[V]
Forward Current : IF
Forward Voltage : VF
Fig.11 Equivalent forward current curve VF = Vth + Rdiff IF
Vth ( Tj) = a0 + a1 Tj
Rdiff ( Tj) = b0+ b1 Tj+ b2 Tj2
Vth 1/Rdiff
Tjin ºC; -55 ºC < Tj< ºC ; IF<
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Datasheet
ROHm SEMICONDUCTOR
R1102
S
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
Notice
ROHM Customer Support System
http://www.rohm.com/contact/
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
Notes
The information contained herein is subject to change without notice.
Before you use our Products, please contact our sales representative
and verify the latest specifica-
tions :
Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
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Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
The technical information specified herein is intended only to show the typical functions of and
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any license to use or exercise intellectual property or other rights held by ROHM or any other
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