Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
BSS123LT1G MOSFET N-CH 100V 170MA SOT23-3 onsemi	129.623 In Stock	1 : 0,26000 € Cut Tape (CT) 3.000 : 0,05367 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	170mA (Ta)	10V	6Ohm @ 100mA, 10V	2.6V @ 1mA	-	±20V	20 pF @ 25 V	-	225mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
NTR4101PT1G MOSFET P-CH 20V 1.8A SOT23-3 onsemi	68.646 In Stock	1 : 0,40000 € Cut Tape (CT) 3.000 : 0,08828 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	1.8A (Ta)	1.8V, 4.5V	85mOhm @ 1.6A, 4.5V	1.2V @ 250µA	8.5 nC @ 4.5 V	±8V	675 pF @ 10 V	-	420mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
FDN5618P MOSFET P-CH 60V 1.25A SUPERSOT3 onsemi	13.513 In Stock	1 : 0,65000 € Cut Tape (CT) 3.000 : 0,15139 € Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	1.25A (Ta)	4.5V, 10V	170mOhm @ 1.25A, 10V	3V @ 250µA	13.8 nC @ 10 V	±20V	430 pF @ 30 V	-	500mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.