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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
EPC2202
EPC2202
GANFET N-CH 80V 18A DIE
EPC
25.436
In Stock
1 : 3,09000 €
Cut Tape (CT)
2.500 : 1,43016 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelGaNFET (Gallium Nitride)80 V18A (Ta)5V17mOhm @ 11A, 5V2.5V @ 3mA4 nC @ 5 V+5.75V, -4V415 pF @ 50 V---40°C ~ 150°C (TJ)Surface MountDie Outline (6-Solder Bar)Die
EPC2203
EPC2203
GANFET N-CH 80V 1.7A DIE
EPC
27.831
In Stock
1 : 0,92000 €
Cut Tape (CT)
2.500 : 0,39050 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelGaNFET (Gallium Nitride)80 V1.7A (Ta)5V80mOhm @ 1A, 5V2.5V @ 600µA0.83 nC @ 5 V+5.75V, -4V88 pF @ 50 V---40°C ~ 150°C (TJ)Surface MountDieDie
EPC2216
EPC2216
GANFET N-CH 15V 3.4A DIE
EPC
46.908
In Stock
1 : 1,40000 €
Cut Tape (CT)
2.500 : 0,59357 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelGaNFET (Gallium Nitride)15 V3.4A (Ta)5V26mOhm @ 1.5A, 5V2.5V @ 1mA1.1 nC @ 5 V+6V, -4V118 pF @ 7.5 VStandard--40°C ~ 150°C (TJ)Surface MountDieDie
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Transistors - FETs, MOSFETs - Single


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.