Showing
of 509
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
BSS123NH6433XTMA1
MOSFET N-CH 100V 190MA SOT23-3
Infineon Technologies
30.180
In Stock
1 : 0,40000 €
Cut Tape (CT)
10.000 : 0,05886 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)100 V190mA (Ta)4.5V, 10V6Ohm @ 190mA, 10V1.8V @ 13µA0.9 nC @ 10 V±20V20.9 pF @ 25 V-500mW (Ta)-55°C ~ 150°C (TJ)Surface MountPG-SOT23TO-236-3, SC-59, SOT-23-3
SOT-23-3
BSS123NH6327XTSA1
MOSFET N-CH 100V 190MA SOT23-3
Infineon Technologies
38.412
In Stock
1 : 0,39000 €
Cut Tape (CT)
3.000 : 0,07261 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)100 V190mA (Ta)4.5V, 10V6Ohm @ 190mA, 10V1.8V @ 13µA0.9 nC @ 10 V±20V20.9 pF @ 25 V-500mW (Ta)-55°C ~ 150°C (TJ)Surface MountPG-SOT23TO-236-3, SC-59, SOT-23-3
SOT-23-3
BSS119NH6327XTSA1
MOSFET N-CH 100V 190MA SOT23-3
Infineon Technologies
51.099
In Stock
1 : 0,38000 €
Cut Tape (CT)
3.000 : 0,10796 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)100 V190mA (Ta)4.5V, 10V6Ohm @ 190mA, 10V2.3V @ 13µA0.6 nC @ 10 V±20V20.9 pF @ 25 V-500mW (Ta)-55°C ~ 150°C (TJ)Surface MountPG-SOT23TO-236-3, SC-59, SOT-23-3
PG-TSDSON-8;8-PowerTDFN
BSZ340N08NS3GATMA1
MOSFET N-CH 80V 6A/23A 8TSDSON
Infineon Technologies
49.324
In Stock
1 : 0,75000 €
Cut Tape (CT)
5.000 : 0,26926 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)80 V6A (Ta), 23A (Tc)6V, 10V34mOhm @ 12A, 10V3.5V @ 12µA9.1 nC @ 10 V±20V630 pF @ 40 V-2.1W (Ta), 32W (Tc)-55°C ~ 150°C (TJ)Surface MountPG-TSDSON-88-PowerTDFN
TSDSON-8
BSZ060NE2LSATMA1
MOSFET N-CH 25V 12A/40A TSDSON
Infineon Technologies
58.392
In Stock
1 : 0,76000 €
Cut Tape (CT)
5.000 : 0,27392 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)25 V12A (Ta), 40A (Tc)4.5V, 10V6mOhm @ 20A, 10V2V @ 250µA9.1 nC @ 10 V±20V670 pF @ 12 V-2.1W (Ta), 26W (Tc)-55°C ~ 150°C (TJ)Surface MountPG-TSDSON-8-FL8-PowerTDFN
8-Power TDFN
BSC340N08NS3GATMA1
MOSFET N-CH 80V 7A/23A TDSON-8-5
Infineon Technologies
115.917
In Stock
1 : 0,84000 €
Cut Tape (CT)
5.000 : 0,30340 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)80 V7A (Ta), 23A (Tc)6V, 10V34mOhm @ 12A, 10V3.5V @ 12µA9.1 nC @ 10 V±20V756 pF @ 40 V-2.5W (Ta), 32W (Tc)-55°C ~ 150°C (TJ)Surface MountPG-TDSON-8-58-PowerTDFN
TSDSON-8
BSZ100N06NSATMA1
MOSFET N-CH 60V 40A TSDSON
Infineon Technologies
33.864
In Stock
1 : 0,80000 €
Cut Tape (CT)
5.000 : 0,32210 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)60 V40A (Tc)6V, 10V10mOhm @ 20A, 10V3.3V @ 14µA15 nC @ 10 V±20V1075 pF @ 30 V-2.1W (Ta), 36W (Tc)-55°C ~ 150°C (TJ)Surface MountPG-TSDSON-8-FL8-PowerTDFN
PG-TDSON-8-1
BSC440N10NS3GATMA1
MOSFET N-CH 100V 5.3A/18A TDSON
Infineon Technologies
9.020
In Stock
1 : 0,82000 €
Cut Tape (CT)
5.000 : 0,32770 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)100 V5.3A (Ta), 18A (Tc)6V, 10V44mOhm @ 12A, 10V3.5V @ 12µA10.8 nC @ 10 V±20V810 pF @ 50 V-29W (Tc)-55°C ~ 150°C (TJ)Surface MountPG-TDSON-8-18-PowerTDFN
8-Power TDFN
BSZ440N10NS3GATMA1
MOSFET N-CH 100V 5.3A/18A TSDSON
Infineon Technologies
19.713
In Stock
1 : 0,82000 €
Cut Tape (CT)
5.000 : 0,32885 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)100 V5.3A (Ta), 18A (Tc)6V, 10V44mOhm @ 12A, 10V2.7V @ 12µA9.1 nC @ 10 V±20V640 pF @ 50 V-29W (Tc)-55°C ~ 150°C (TJ)Surface MountPG-TSDSON-88-PowerTDFN
8-Power TDFN
BSC097N06NSATMA1
MOSFET N-CH 60V 46A TDSON-8-6
Infineon Technologies
8.418
In Stock
1 : 0,86000 €
Cut Tape (CT)
5.000 : 0,34809 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)60 V46A (Tc)6V, 10V9.7mOhm @ 40A, 10V3.3V @ 14µA15 nC @ 10 V±20V1075 pF @ 30 V-2.5W (Ta), 36W (Tc)-55°C ~ 150°C (TJ)Surface MountPG-TDSON-8-68-PowerTDFN
8-Power TDFN
BSC052N03LSATMA1
MOSFET N-CH 30V 17A/57A TDSON
Infineon Technologies
111.475
In Stock
1 : 0,99000 €
Cut Tape (CT)
5.000 : 0,39842 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)30 V17A (Ta), 57A (Tc)4.5V, 10V5.2mOhm @ 30A, 10V2V @ 250µA12 nC @ 10 V±20V770 pF @ 15 V-2.5W (Ta), 28W (Tc)-55°C ~ 150°C (TJ)Surface MountPG-TDSON-8-68-PowerTDFN
TSDSON-8
BSZ110N08NS5ATMA1
MOSFET N-CH 80V 40A TSDSON
Infineon Technologies
96.436
In Stock
1 : 1,05000 €
Cut Tape (CT)
5.000 : 0,42556 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)80 V40A (Tc)6V, 10V11mOhm @ 20A, 10V3.8V @ 22µA18.5 nC @ 10 V±20V1300 pF @ 40 V-50W (Tc)-55°C ~ 150°C (TJ)Surface MountPG-TSDSON-8-FL8-PowerTDFN
8-Power TDFN
BSC094N06LS5ATMA1
MOSFET N-CHANNEL 60V 47A 8TDSON
Infineon Technologies
23.232
In Stock
1 : 1,14000 €
Cut Tape (CT)
5.000 : 0,44734 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)60 V47A (Tc)4.5V, 10V9.4mOhm @ 24A, 10V2.3V @ 14µA9.4 nC @ 4.5 V±20V1300 pF @ 30 V-36W (Tc)-55°C ~ 150°C (TJ)Surface MountPG-TDSON-8-68-PowerTDFN
10.000
In Stock
1 : 1,15000 €
Cut Tape (CT)
5.000 : 0,45294 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)100 V7.7A (Ta), 31A (Tc)8V, 10V23mOhm @ 10A, 10V3.3V @ 13µA9.3 nC @ 10 V±20V690 pF @ 50 V-3W (Ta), 48W (Tc)-55°C ~ 175°C (TJ)Surface MountPG-TSDSON-8 FL8-PowerTDFN
8-Power TDFN
BSC032N04LSATMA1
MOSFET N-CH 40V 21A/98A TDSON
Infineon Technologies
10.759
In Stock
1 : 1,20000 €
Cut Tape (CT)
5.000 : 0,48200 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)40 V21A (Ta), 98A (Tc)4.5V, 10V3.2mOhm @ 50A, 10V2V @ 250µA25 nC @ 10 V±20V1800 pF @ 20 V-2.5W (Ta), 52W (Tc)-55°C ~ 150°C (TJ)Surface MountPG-TDSON-8-68-PowerTDFN
8-Power TDFN
BSC066N06NSATMA1
MOSFET N-CH 60V 64A TDSON-8-6
Infineon Technologies
11.582
In Stock
1 : 1,35000 €
Cut Tape (CT)
5.000 : 0,54418 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)60 V64A (Tc)6V, 10V6.6mOhm @ 50A, 10V3.3V @ 20µA21 nC @ 10 V±20V1500 pF @ 30 V-2.5W (Ta), 46W (Tc)-55°C ~ 150°C (TJ)Surface MountPG-TDSON-8-68-PowerTDFN
8-Power TDFN
BSC065N06LS5ATMA1
MOSFET N-CHANNEL 60V 64A 8TDSON
Infineon Technologies
18.761
In Stock
1 : 1,41000 €
Cut Tape (CT)
5.000 : 0,55644 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)60 V64A (Tc)4.5V, 10V6.5mOhm @ 32A, 10V2.3V @ 20µA13 nC @ 4.5 V±20V1800 pF @ 30 V-46W (Tc)-55°C ~ 150°C (TJ)Surface MountPG-TDSON-8-68-PowerTDFN
PG-TDSON-8-1
BSC123N08NS3GATMA1
MOSFET N-CH 80V 11A/55A TDSON
Infineon Technologies
49.391
In Stock
1 : 1,48000 €
Cut Tape (CT)
5.000 : 0,58109 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)80 V11A (Ta), 55A (Tc)6V, 10V12.3mOhm @ 33A, 10V3.5V @ 33µA25 nC @ 10 V±20V1870 pF @ 40 V-2.5W (Ta), 66W (Tc)-55°C ~ 150°C (TJ)Surface MountPG-TDSON-8-18-PowerTDFN
70.783
In Stock
1 : 1,49000 €
Cut Tape (CT)
5.000 : 0,60164 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)80 V49A (Tc)6V, 10V11.7mOhm @ 25A, 10V3.8V @ 22µA18 nC @ 10 V±20V1300 pF @ 40 V-2.5W (Ta), 50W (Tc)-55°C ~ 150°C (TJ)Surface MountPG-TDSON-8-78-PowerTDFN
8-Power TDFN
BSC146N10LS5ATMA1
MOSFET N-CH 100V 44A TDSON-8-6
Infineon Technologies
16.689
In Stock
1 : 1,61000 €
Cut Tape (CT)
5.000 : 0,61120 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)100 V44A (Tc)4.5V, 10V14.6mOhm @ 22A, 10V2.3V @ 23µA10 nC @ 4.5 V±20V1300 pF @ 50 V-2.5W (Ta), 52W (Tc)-55°C ~ 150°C (TJ)Surface MountPG-TDSON-8-68-PowerTDFN
8-Power TDFN
BSZ160N10NS3GATMA1
MOSFET N-CH 100V 8A/40A 8TSDSON
Infineon Technologies
59.914
In Stock
1 : 1,43000 €
Cut Tape (CT)
5.000 : 0,62942 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)100 V8A (Ta), 40A (Tc)6V, 10V16mOhm @ 20A, 10V3.5V @ 12µA25 nC @ 10 V±20V1700 pF @ 50 V-2.1W (Ta), 63W (Tc)-55°C ~ 150°C (TJ)Surface MountPG-TSDSON-88-PowerTDFN
TSDSON-8
BSZ075N08NS5ATMA1
MOSFET N-CH 80V 40A 8TSDSON
Infineon Technologies
62.735
In Stock
1 : 1,45000 €
Cut Tape (CT)
5.000 : 0,63938 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)80 V40A (Tc)6V, 10V7.5mOhm @ 20A, 10V3.8V @ 36µA29.5 nC @ 10 V±20V2080 pF @ 40 V-69W (Tc)-55°C ~ 150°C (TJ)Surface MountPG-TSDSON-8-268-PowerTDFN
TSDSON-8
BSZ024N04LS6ATMA1
MOSFET N-CH 40V 24A/40A TSDSON
Infineon Technologies
90.744
In Stock
1 : 1,62000 €
Cut Tape (CT)
5.000 : 0,68209 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)40 V24A (Ta), 40A (Tc)4.5V, 10V2.4mOhm @ 20A, 10V2.3V @ 250µA25 nC @ 10 V±20V1800 pF @ 20 V-2.5W (Ta), 75W (Tc)-55°C ~ 175°C (TJ)Surface MountPG-TSDSON-8-FL8-PowerTDFN
PG-TDSON-8-1
BSC070N10NS3GATMA1
MOSFET N-CH 100V 90A TDSON-8
Infineon Technologies
53.812
In Stock
1 : 1,67000 €
Cut Tape (CT)
5.000 : 0,72335 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)100 V90A (Tc)6V, 10V7mOhm @ 50A, 10V3.5V @ 75µA55 nC @ 10 V±20V4000 pF @ 50 V-114W (Tc)-55°C ~ 150°C (TJ)Surface MountPG-TDSON-8-18-PowerTDFN
47.433
In Stock
1 : 1,67000 €
Cut Tape (CT)
5.000 : 0,73527 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)80 V74A (Tc)6V, 10V7.2mOhm @ 37A, 10V3.8V @ 36µA29 nC @ 10 V±20V2100 pF @ 40 V-2.5W (Ta), 69W (Tc)-55°C ~ 150°C (TJ)Surface MountPG-TDSON-8-78-PowerTDFN
Showing
of 509

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.