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Technology
Configuration
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
eGaN Series
EPC2106
GANFET TRANS SYM 100V BUMPED DIE
EPC
83.695
In Stock
1 : 1,60000 €
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2.500 : 0,73442 €
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ActiveGaNFET (Gallium Nitride)2 N-Channel (Half Bridge)-100V1.7A70mOhm @ 2A, 5V2.5V @ 600µA0.73nC @ 5V75pF @ 50V--40°C ~ 150°C (TJ)Surface MountDieDie
BSM300D12P2E001
BSM300D12P2E001
MOSFET 2N-CH 1200V 300A
Rohm Semiconductor
67
In Stock
1 : 788,77000 €
Tray
-
Tray
ActiveSilicon Carbide (SiC)2 N-Channel (Half Bridge)-1200V (1.2kV)300A (Tc)-4V @ 68mA-35000pF @ 10V1875W-40°C ~ 150°C (TJ)Chassis MountModuleModule
674.322
In Stock
1 : 0,23000 €
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3.000 : 0,04022 €
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ActiveMOSFET (Metal Oxide)2 N-Channel (Dual)-60V300mA1.5Ohm @ 100mA, 10V2.1V @ 250µA0.6nC @ 4.5V40pF @ 10V285mW150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-363US6
SOT-363
2N7002DW-7-F
MOSFET 2N-CH 60V 0.23A SOT-363
Diodes Incorporated
213.871
In Stock
1 : 0,31000 €
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3.000 : 0,05829 €
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-
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ActiveMOSFET (Metal Oxide)2 N-Channel (Dual)-60V230mA7.5Ohm @ 50mA, 5V2V @ 250µA-50pF @ 25V310mW-55°C ~ 150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-363SOT-363
SOT 363
NTJD5121NT1G
MOSFET 2N-CH 60V 295MA SOT363
onsemi
62.510
In Stock
1 : 0,34000 €
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3.000 : 0,06068 €
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-
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ActiveMOSFET (Metal Oxide)2 N-Channel (Dual)Logic Level Gate60V295mA1.6Ohm @ 500mA, 10V2.5V @ 250µA0.9nC @ 4.5V26pF @ 20V250mW-55°C ~ 150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-363SC-88/SC70-6/SOT-363
SOT-563
SSM6L56FE,LM
SMALL-SIGNAL MOSFET 2 IN 1 NCH +
Toshiba Semiconductor and Storage
46.644
In Stock
1 : 0,35000 €
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4.000 : 0,06477 €
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ActiveMOSFET (Metal Oxide)N and P-ChannelLogic Level Gate, 1.5V Drive20V800mA (Ta)235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V1V @ 1mA1nC @ 10V55pF @ 10V, 100pF @ 10V150mW (Ta)150°CSurface MountSOT-563, SOT-666ES6
6-TSSOP, SC-88, SOT-363
SSM6N37FU,LF
MOSFET 2 N-CHANNEL 20V 250MA US6
Toshiba Semiconductor and Storage
371.292
In Stock
1 : 0,35000 €
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3.000 : 0,06614 €
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-
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ActiveMOSFET (Metal Oxide)2 N-Channel (Dual)Logic Level Gate, 1.5V Drive20V250mA (Ta)2.2Ohm @ 100mA, 4.5V1V @ 1mA-12pF @ 10V300mW150°CSurface Mount6-TSSOP, SC-88, SOT-363US6
MMDT2907A-TP
2N7002DW-TP
MOSFET 2N-CH 60V 0.115A SOT-363
Micro Commercial Co
1.243.896
In Stock
1 : 0,37000 €
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3.000 : 0,06800 €
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-
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ActiveMOSFET (Metal Oxide)2 N-Channel (Dual)-60V115mA7.5Ohm @ 50mA, 5V2V @ 250µA-50pF @ 25V200mW-55°C ~ 150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-363SOT-363
SOT 563
DMC2400UV-7
MOSFET N/P-CH 20V SOT563
Diodes Incorporated
258.240
In Stock
1 : 0,37000 €
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3.000 : 0,06809 €
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ActiveMOSFET (Metal Oxide)N and P-ChannelLogic Level Gate20V1.03A, 700mA480mOhm @ 200mA, 5V900mV @ 250µA0.5nC @ 4.5V37.1pF @ 10V450mW-55°C ~ 150°C (TJ)Surface MountSOT-563, SOT-666SOT-563
111.368
In Stock
1 : 0,40000 €
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4.000 : 0,07383 €
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-
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ActiveMOSFET (Metal Oxide)2 N-Channel (Dual)Logic Level Gate30V100mA4Ohm @ 10mA, 4V1.5V @ 100µA-8.5pF @ 3V150mW150°C (TJ)Surface MountSOT-563, SOT-666ES6
SOT363
BSS138PS,115
MOSFET 2N-CH 60V 0.32A 6TSSOP
Nexperia USA Inc.
391.658
In Stock
1 : 0,40000 €
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3.000 : 0,07465 €
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ActiveMOSFET (Metal Oxide)2 N-Channel (Dual)Logic Level Gate60V320mA1.6Ohm @ 300mA, 10V1.5V @ 250µA0.8nC @ 4.5V50pF @ 10V420mW150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-3636-TSSOP
SOT363
2N7002BKS,115
MOSFET 2N-CH 60V 0.3A 6TSSOP
Nexperia USA Inc.
444.297
In Stock
1 : 0,41000 €
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3.000 : 0,07587 €
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ActiveMOSFET (Metal Oxide)2 N-Channel (Dual)Logic Level Gate60V300mA1.6Ohm @ 500mA, 10V2.1V @ 250µA0.6nC @ 4.5V50pF @ 10V295mW150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-3636-TSSOP
EMT6_EMT6 PKg
EM6K34T2CR
MOSFET 2N-CH 50V 0.2A EMT6
Rohm Semiconductor
348.652
In Stock
This product has a maximum purchase limit
1 : 0,36000 €
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8.000 : 0,07597 €
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ActiveMOSFET (Metal Oxide)2 N-Channel (Dual)Logic Level Gate, 0.9V Drive50V200mA2.2Ohm @ 200mA, 4.5V800mV @ 1mA-26pF @ 10V120mW150°C (TJ)Surface MountSOT-563, SOT-666EMT6
SOT363
BSS84AKS,115
MOSFET 2P-CH 50V 0.16A 6TSSOP
Nexperia USA Inc.
72.982
In Stock
1 : 0,42000 €
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3.000 : 0,07694 €
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ActiveMOSFET (Metal Oxide)2 P-Channel (Dual)Logic Level Gate50V160mA7.5Ohm @ 100mA, 10V2.1V @ 250µA0.35nC @ 5V36pF @ 25V445mW-55°C ~ 150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-3636-TSSOP
TSOT-26
DMG6602SVT-7
MOSFET N/P-CH 30V TSOT23-6
Diodes Incorporated
193.567
In Stock
1 : 0,35000 €
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3.000 : 0,07761 €
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Not For New DesignsMOSFET (Metal Oxide)N and P-ChannelLogic Level Gate, 4.5V Drive30V3.4A, 2.8A60mOhm @ 3.1A, 10V2.3V @ 250µA13nC @ 10V400pF @ 15V840mW-55°C ~ 150°C (TJ)Surface MountSOT-23-6 Thin, TSOT-23-6TSOT-26
SOT-363
DMG1016UDW-7
MOSFET N/P-CH 20V SOT363
Diodes Incorporated
149.390
In Stock
1 : 0,42000 €
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3.000 : 0,07772 €
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-
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ActiveMOSFET (Metal Oxide)N and P-ChannelLogic Level Gate20V1.07A, 845mA450mOhm @ 600mA, 4.5V1V @ 250µA0.74nC @ 4.5V60.67pF @ 10V330mW-55°C ~ 150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-363SOT-363
SOT-563
SSM6L36FE,LM
MOSFET N/P-CH 20V 0.5A/0.33A ES6
Toshiba Semiconductor and Storage
60.350
In Stock
1 : 0,42000 €
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4.000 : 0,07772 €
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ActiveMOSFET (Metal Oxide)N and P-ChannelLogic Level Gate20V500mA, 330mA630mOhm @ 200mA, 5V1V @ 1mA1.23nC @ 4V46pF @ 10V150mW150°C (TJ)Surface MountSOT-563, SOT-666ES6
SOT666
NX3020NAKV,115
MOSFET 2N-CH 30V 200MA SOT666
Nexperia USA Inc.
232.000
In Stock
This product has a maximum purchase limit
1 : 0,37000 €
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4.000 : 0,08184 €
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Not For New DesignsMOSFET (Metal Oxide)2 N-Channel (Dual)Logic Level Gate30V200mA4.5Ohm @ 100mA, 10V1.5V @ 250µA0.44nC @ 4.5V13pF @ 10V375mW-55°C ~ 150°C (TJ)Surface MountSOT-563, SOT-666SOT-666
SOT363
BSS138BKS,115
MOSFET 2N-CH 60V 0.32A 6TSSOP
Nexperia USA Inc.
502.267
In Stock
1 : 0,44000 €
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3.000 : 0,08257 €
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ActiveMOSFET (Metal Oxide)2 N-Channel (Dual)Logic Level Gate60V320mA1.6Ohm @ 320mA, 10V1.6V @ 250µA0.7nC @ 4.5V56pF @ 10V445mW-55°C ~ 150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-3636-TSSOP
SOT363
NX3008NBKS,115
MOSFET 2N-CH 30V 0.35A 6TSSOP
Nexperia USA Inc.
937.533
In Stock
This product has a maximum purchase limit
1 : 0,46000 €
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3.000 : 0,08549 €
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ActiveMOSFET (Metal Oxide)2 N-Channel (Dual)Logic Level Gate30V350mA1.4Ohm @ 350mA, 4.5V1.1V @ 250µA0.68nC @ 4.5V50pF @ 15V445mW-55°C ~ 150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-3636-TSSOP
SOT363
NX3008CBKS,115
MOSFET N/P-CH 30V 6TSSOP
Nexperia USA Inc.
11.661
In Stock
This product has a maximum purchase limit
1 : 0,46000 €
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3.000 : 0,08549 €
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ActiveMOSFET (Metal Oxide)N and P-ChannelLogic Level Gate30V350mA, 200mA1.4Ohm @ 350mA, 4.5V1.1V @ 250µA0.68nC @ 4.5V50pF @ 15V445mW-55°C ~ 150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-3636-TSSOP
SOT363
NX3008PBKS,115
MOSFET 2P-CH 30V 0.2A 6TSSOP
Nexperia USA Inc.
282.013
In Stock
This product has a maximum purchase limit
1 : 0,46000 €
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3.000 : 0,08549 €
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ActiveMOSFET (Metal Oxide)2 P-Channel (Dual)Logic Level Gate30V200mA4.1Ohm @ 200mA, 4.5V1.1V @ 250µA0.75nC @ 4.5V46pF @ 15V445mW-55°C ~ 150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-3636-TSSOP
448; PPG-SOT363-PO; ; 6
2N7002DWH6327XTSA1
MOSFET 2N-CH 60V 0.3A SOT363
Infineon Technologies
4.132
In Stock
1 : 0,46000 €
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3.000 : 0,08549 €
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ActiveMOSFET (Metal Oxide)2 N-Channel (Dual)Logic Level Gate60V300mA3Ohm @ 500mA, 10V2.5V @ 250µA0.6nC @ 10V20pF @ 25V500mW-55°C ~ 150°C (TJ)Surface Mount6-VSSOP, SC-88, SOT-363PG-SOT363-PO
SOT-563-6_463A
NTZD3155CT2G
MOSFET N/P-CH 20V SOT-563
onsemi
71.359
In Stock
1 : 0,39000 €
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4.000 : 0,08678 €
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ActiveMOSFET (Metal Oxide)N and P-ChannelLogic Level Gate20V540mA, 430mA550mOhm @ 540mA, 4.5V1V @ 250µA2.5nC @ 4.5V150pF @ 16V250mW-55°C ~ 150°C (TJ)Surface MountSOT-563, SOT-666SOT-563
35.478
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1 : 0,40000 €
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4.000 : 0,08743 €
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ActiveMOSFET (Metal Oxide)N and P-ChannelLogic Level Gate, 1.5V Drive20V800mA (Ta), 720mA (Ta)240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V1V @ 1mA2nC @ 4.5V, 1.76nC @ 4.5V90pF @ 10V, 110pF @ 10V150mW (Ta)150°CSurface MountSOT-563, SOT-666ES6
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FET, MOSFET Arrays


Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.