UJ3N120070K3S Datasheet

: United Sic DC-AC inverters Motor drives at um
70mW - 1200V SiC Normally-On JFET | UJ3N120070K3S
Datasheet
Description
Features Typical Applications
w w Over current protection circuits
w
Voltage controlled wDC-AC inverters
w w Switch mode power supplies
w w Power factor correction modules
w
Low gate charge wMotor drives
wLow intrinsic capacitance wInduction heating
wRoHS compliant
Maximum Ratings
Symbol Units
VDS V
A
A
IDM A
Ptot W
TJ,max °C
TJ, TSTG °C
TL°C
(1) +20V AC rating applies for turn-on pulses <200ns applied with external RG > 1W.
(2) Limited by TJ,max
(3) Pulse width tp limited by TJ,max
254
Max. lead temperature for soldering,
1/8” from case for 5 seconds
250
V
Gate-source voltage
VGS
24.5
Extremely fast switching not dependent on temperature
Typical on-resistance RDS(on),typ of 70mW
Maximum operating temperature of 175°C
Continuous drain current (2)
ID
Power dissipation
TC=25°C
Value
1200
-20 to +20
DC
TC = 25°C
Drain-source voltage
TC = 100°C
Parameter
Test Conditions
85
-20 to +3
33.5
AC (1)
TC = 25°C
Pulsed drain current (3)
Maximum junction temperature
175
Operating and storage temperature
-55 to 175
3
CASE
12
D (2)
S (3)
CASE
G (1)
UJ3N120070K3S TO-247-3L UJ3N120070K3S
Part Number Package Marking
Rev. B, December 2018
1
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70mW - 1200V SiC Normally-On JFET | UJ3N120070K3S
Datasheet
Electrical Characteristics (TJ = +25°C unless otherwise specified)
Typical Performance - Static
Min Typ Max
BVDS 1200 V
5 30
18
5 50
20
63
70 90
139
154
VG(th) -14 -11.5 -6 V
RG3.3 W
VDS = 5V, ID = 35mA
Gate threshold voltage
Gate resistance
f = 1MHz, open drain
VDS = 1200V,
VGS = -20V, TJ = 25°C
Total drain leakage current
Total gate leakage current
IG
VDS = 1200V,
VGS = -20V, TJ = 175°C
VGS=-20V, Tj=25°C
VGS=-20V, Tj=175°C
VGS=0V, ID=10A,
TJ = 175°C
Drain-source on-resistance
RDS(on)
VGS=2V, ID=10A,
TJ = 25°C
VGS=2V, ID=10A,
TJ = 175°C
VGS=0V, ID=10A,
TJ = 25°C
Drain-source breakdown voltage
VGS= - 20V, ID=1mA
ID
mW
mA
mA
Units
Value
Parameter
Symbol
Test Conditions
Rev. B, December 2018
2
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70mW - 1200V SiC Normally-On JFET | UJ3N120070K3S
Datasheet
Typical Performance - Dynamic
Min Typ Max
Ciss 985
Coss 100
Crss 95
Coss(er) 52 pF
QG116
QGD 63
QGS 11
td(on) 17
tr25
td(off) 29
tf39
EON 434
EOFF 393
ETOTAL 827
td(on) 17
tr23
td(off) 25
tf24
EON 418
EOFF 278
ETOTAL 696
Thermal Characteristics
Min Typ Max
RqJC 0.45 0.59 °C/W
Turn-off energy
Parameter
symbol
Test Conditions
Value
Units
Input capacitance
Output capacitance
Reverse transfer capacitance
VDS = 100V,
VGS = -20V,
f = 100kHz
pF
mJ
ns
Total switching energy
Total switching energy
Turn-on delay time
Fall time
Turn-on energy
Turn-off energy
Total gate charge
Gate-drain charge
VDS=800V, ID = 25A,
VGS=-18V to 0V
VDS=800V, ID=25A,
Gate Driver =-18V to 0V,
RG,EXT = 1W,
Inductive Load,
FWD: UJ2D1215T
TJ = 25°C
Turn-off delay time
Rise time
Gate-source charge
Rise time
VDS=800V, ID=25A,
Gate Driver =-18V to 0V,
RG,EXT = 1W,
Inductive Load,
FWD: UJ2D1215T
TJ = 150°C
Turn-off delay time
Fall time
Effective output capacitance, energy related
VDS = 0V to 800V,
VGS = -20V
Turn-on energy
mJ
nC
Turn-on delay time
ns
Parameter
symbol
Test Conditions
Value
Units
Thermal resistance, junction-to-case
Rev. B, December 2018
3
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70mW - 1200V SiC Normally-On JFET | UJ3N120070K3S
Datasheet
Typical Performance Diagrams
Figure 1 Typical output characteristics Figure 2 Typical output characteristics
at T J = -55°C at T J = 25°C
Figure 3 Typical output characteristics Figure 4 Typical drain-source leakage
at T J = 175°C at V GS = -20V
1.E-07
1.E-06
1.E-05
1.E-04
1.E-03
200 400 600 800 1000 1200
Drain Leakage Current, ID(A)
Drain-Source Voltage, VDS (V)
Tj = -55°C
Tj = 25°C
Tj = 125°C
Tj = 175°C
0
20
40
60
80
100
0 1 2 3 4 5 6 7 8 9 10
Drain Current, ID(A)
Drain-Source Voltage, VDS (V)
Vgs = 2V
Vgs = 0V
Vgs= - 2V
Vgs = -4V
Vgs = -6V
Vgs = -8V
0
20
40
60
80
100
0 1 2 3 4 5 6 7 8 9 10
Drain Current, ID(A)
Drain-Source Voltage, VDS (V)
Vgs = 2V
Vgs = 0V
Vgs= - 2V
Vgs = -4V
Vgs = -6V
Vgs = -8V
0
10
20
30
40
50
60
0 1 2 3 4 5 6 7 8 9 10
Drain Current, ID(A)
Drain-Source Voltage, VDS (V)
Vgs = 2V
Vgs = 0V
Vgs= - 2V
Vgs = -4V
Vgs = -6V
Vgs = -8V
Vgs = -10V
Rev. B, December 2018
4
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70mW - 1200V SiC Normally-On JFET | UJ3N120070K3S
Datasheet
Figure 5 Typical capacitances at 100kHz Figure 6 Typical transfer characteristics
and V GS = -20V at V DS = 5V
Figure 7 Normalized on-resistance vs. Figure 8 Typical drain-source
temperature at V GS = 0V and I D = 10A on-resistance at V GS = 0V
10
100
1000
0 200 400 600 800 1000 1200
Capacitance, C (pF)
Drain-Source Voltage, VDS (V)
Ciss
Coss
Crss
0.0
0.5
1.0
1.5
2.0
2.5
-75 -50 -25 0 25 50 75 100 125 150 175
On-Resistance, RDS_ON (P.U.)
Junction Temperature, TJ(°C)
0
10
20
30
40
50
60
-15 -10 -5 0
Drain Current, ID(A)
Gate-Source Voltage, VGS (V)
Tj = -55°C
Tj = 25°C
Tj = 125°C
Tj = 175°C
0
50
100
150
200
250
300
010 20 30 40 50 60 70 80 90 100
On-Resistance, RDS(on) (mW)
Drain Current, ID(A)
Tj = -55°C
Tj = 25°C
Tj = 125°C
Tj = 175°C
Rev. B, December 2018
5
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70mW - 1200V SiC Normally-On JFET | UJ3N120070K3S
Datasheet
Figure 9 Threshold voltage vs. Tj
Figure 10 Typical stored energy in C OSS
at V DS = 5V and I D = 35mA at V GS = -20V
Figure 11 Total power Dissipation
Figure 12 Safe operation area
Tc = 25°C, Parameter t p
-15
-10
-5
0
-75 -50 -25 0 25 50 75 100 125 150 175
Threshold Voltage, VG(th) (V)
Junction Temperature, Tj(°C)
0
10
20
30
40
0 200 400 600 800 1000 1200
EOSS (mJ)
Drain-Source Voltage, VDS (V)
0
50
100
150
200
250
300
-75 -50 -25 0 25 50 75 100 125 150 175
Power Dissipation, Ptot (W)
Case Temperature, TC(°C)
0.1
1
10
100
110 100 1000
Drain Current, ID(A)
Drain-Source Voltage, VDS (V)
1ms
10ms
100ms
1ms
DC 10ms
Rev. B, December 2018
6
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70mW - 1200V SiC Normally-On JFET | UJ3N120070K3S
Datasheet
Figure 13 Typical gate leakage current Figure 14 Typical gate forward current
at V DS = 0V at V DS = 0V
Figure 15 Maximum transient
Figure 16 Typical gate charge
thermal impedance
at V DS = 800V and I D = 25A
0.001
0.01
0.1
1
1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01
Thermal Impedance, ZqJC (°C/W)
Pulse Time, tp(s)
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
1.E-08
1.E-07
1.E-06
1.E-05
1.E-04
-20 -15 -10 -5 0
Gate Current, IG(A)
Gate-Source Voltage, VGS (V)
Tj = -55°C
Tj = 25°C
Tj = 125°C
Tj = 175°C
0.0
0.2
0.4
0.6
0.8
1.0
0123456
Gate Current, IG(A)
Gate-Source Voltage, VGS (V)
Tj = -55°C
Tj = 25°C
Tj = 125°C
Tj = 175°C
-18
-15
-12
-9
-6
-3
0
3
020 40 60 80 100 120 140
Gate-Source Voltage, VGS (V)
Gate Charge, QG(nC)
Rev. B, December 2018
7
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70mW - 1200V SiC Normally-On JFET | UJ3N120070K3S
Datasheet
Figure 17 Clamped inductive switching energy Figure 18 Clamped inductive switching
vs. drain current at T J = 150°C energy vs. gate resistor R G
Figure 19 Clamped inductive switching energy
vs. junction temperature at I D = 25A
0
200
400
600
800
1000
0 5 10 15 20 25 30 35
Switching Energy (mJ)
Drain Current, ID(A)
Etot
Eon
Eoff
VDD = 800V, VGS = -18V/0V
RG = 1W, FWD: UJ2D1215T
TJ= 150°C
0
100
200
300
400
500
600
700
800
900
025 50 75 100 125 150 175
Switching Energy (mJ)
Junction Temperature, TJ(°C)
Etot
Eon
Eoff
VDD = 800V, VGS = -18V/0V
RG= 1W, FWD: UJ2D1215T
0
200
400
600
800
1000
1200
1400
1600
0 2 4 6 8 10
Switching Energy (mJ)
Gate Resistor, RG(W)
Etot
Eon
Eoff
VDD = 800V, VGS = -18V/0V
ID =25A, TJ= 150°C
FWD: UJ2D1215T
Rev. B, December 2018
8
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70mW - 1200V SiC Normally-On JFET | UJ3N120070K3S
Datasheet
Disclaimer
United Silicon Carbide, Inc. reserves the right to change or modify any of the products and their inherent physical and
technical specifications without prior notice. United Silicon Carbide, Inc. assumes no responsibility or liability for any
errors or inaccuracies within.
Information on all products and contained herein is intended for description only. No license, express or implied, to any
intellectual property rights is granted within this document.
United Silicon Carbide, Inc. assumes no liability whatsoever relating to the choice, selection or use of the United Silicon
Carbide, Inc. products and services described herein.
Rev. B, December 2018
9
For more information go to www.unitedsic.com.