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NUD/SZNUD3160 Datasheet

ON Semiconductor

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Datasheet

© Semiconductor Components Industries, LLC, 2003
October, 2016 Rev. 7
1Publication Order Number:
NUD3160/D
NUD3160, SZNUD3160
Industrial Inductive
Load Driver
This microintegrated part provides a single component solution to
switch inductive loads such as relays, solenoids, and small DC motors
without the need of a freewheeling diode. It accepts logic level
inputs, thus allowing it to be driven by a large variety of devices
including logic gates, inverters, and microcontrollers.
Features
Provides Robust Interface between D.C. Relay Coils and Sensitive
Logic
Capable of Driving Relay Coils Rated up to 150 mA at 12 V, 24 V
or 48 V
Replaces 3 or 4 Discrete Components for Lower Cost
Internal Zener Eliminates Need for FreeWheeling Diode
Meets Load Dump and other Automotive Specs
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable
These are PbFree Devices
Typical Applications
Automotive and Industrial Environment
Drives Window, Latch, Door, and Antenna Relays
Benefits
Reduced PCB Space
Standardized Driver for Wide Range of Relays
Simplifies Circuit Design and PCB Layout
Compliance with Automotive Specifications
Gate (1) 10 k
100 k
Drain (3)
Source (2)
Figure 1. Internal Circuit Diagrams
Gate (2) 10 k
100 k
Drain (6)
Source (1)
Gate (5)
Drain (3)
Source (4)
10 k
100 k
CASE 318 CASE 318F
www.onsemi.com
MARKING DIAGRAMS
SOT23
CASE 318
STYLE 21
JW8 MG
G
JW8 = Specific Device Code
M = Date Code
G= PbFree Package
(Note: Microdot may be in either location)
SC74
CASE 318F
STYLE 7
JW8 = Specific Device Code
M = Date Code
G= PbFree Package
(Note: Microdot may be in either location)
JW8 MG
G
1
2
3
1
6
Device Package Shipping
ORDERING INFORMATION
NUD3160LT1G SOT23
(PbFree)
3000 / Tape &
Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NUD3160DMT1G SC74
(PbFree)
3000 / Tape &
Reel
SZNUD3160LT1G SOT23
(PbFree)
3000 / Tape &
Reel
SZNUD3160DMT1G SC74
(PbFree)
3000 / Tape &
Reel
NUD3160, SZNUD3160
www.onsemi.com
2
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Symbol Rating Value Unit
VDSS DraintoSource Voltage – Continuous (TJ = 125°C) 60 V
VGSS GatetoSource Voltage – Continuous (TJ = 125°C) 12 V
IDDrain Current – Continuous (TJ = 125°C)
Minimum copper, double sided board, TA = 80°C
SOT23
SC74 Single device driven
SC74 Both devices driven
1 in2 copper, double sided board, TA = 25°C
SOT23
SC74 Single device driven
SC74 Both devices driven
158
157
132 ea
272
263
230 ea
mA
EZSingle Pulse DraintoSource Avalanche Energy
(For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C)
200 mJ
PPK Peak Power Dissipation, DraintoSource (Notes 1 and 2)
(TJ Initial = 85°C)
20 W
ELD1 Load Dump Pulse, DraintoSource (Note 3)
RSOURCE = 0.5 W, T = 300 ms)
(For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C)
60 V
ELD2 Inductive Switching Transient 1, DraintoSource
(Waveform: RSOURCE = 10 W, T = 2.0 ms)
(For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C)
100 V
ELD3 Inductive Switching Transient 2, DraintoSource
(Waveform: RSOURCE = 4.0 W, T = 50 ms)
(For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C)
300 V
RevBat Reverse Battery, 10 Minutes (DraintoSource)
(For Relay’s Coils/Inductive Loads of 80 W or more)
14 V
DualVolt Dual Voltage Jump Start, 10 Minutes (DraintoSource) 28 V
ESD Human Body Model (HBM)
According to EIA/JESD22/A114 Specification
2000 V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
NUD3160, SZNUD3160
www.onsemi.com
3
THERMAL CHARACTERISTICS
Symbol Rating Value Unit
TAOperating Ambient Temperature 40 to 125 °C
TJMaximum Junction Temperature 150 °C
TSTG Storage Temperature Range 65 to 150 °C
PDTotal Power Dissipation (Note 4) SOT23
Derating above 25°C
225
1.8
mW
mW/°C
PDTotal Power Dissipation (Note 4) SC74
Derating above 25°C
380
3.0
mW
mW/°C
RqJA Thermal Resistance, Junction–to–Ambient
Minimum Copper SOT23
SC74 One Device Powered
SC74 Both Devices Equally Powered
300 mm2 Copper SOT23
SC74 One Device Powered
SC74 Both Devices Equally Powered
556
556
398
395
420
270
°C/W
1. Nonrepetitive current square pulse 1.0 ms duration.
2. For different square pulse durations, see Figure 12.
3. Nonrepetitive load dump pulse per Figure 3.
4. Mounted onto minimum pad board.
NUD3160, SZNUD3160
www.onsemi.com
4
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain to Source Sustaining Voltage
(ID = 10 mA)
VBRDSS 61 66 70 V
Drain to Source Leakage Current
(VDS = 12 V, VGS = 0 V)
(VDS = 12 V, VGS = 0 V, TJ = 125°C)
(VDS = 60 V, VGS = 0 V)
(VDS = 60 V, VGS = 0 V, TJ = 125°C)
IDSS
0.5
1.0
50
80
mA
Gate Body Leakage Current
(VGS = 3.0 V, VDS = 0 V)
(VGS = 3.0 V, VDS = 0 V, TJ = 125°C)
(VGS = 5.0 V, VDS = 0 V)
(VGS = 5.0 V, VDS = 0 V, TJ = 125°C)
IGSS
60
80
90
110
mA
ON CHARACTERISTICS
Gate Threshold Voltage
(VGS = VDS, ID = 1.0 mA)
(VGS = VDS, ID = 1.0 mA, TJ = 125°C)
VGS(th) 1.3
1.3
1.8
2.0
2.0
V
Drain to Source OnResistance
(ID = 150 mA, VGS = 3.0 V)
(ID = 150 mA, VGS = 3.0 V, TJ = 125°C)
(ID = 150 mA, VGS = 5.0 V)
(ID = 150 mA, VGS = 5.0 V, TJ = 125°C)
RDS(on)
2.4
3.7
1.8
2.9
W
Output Continuous Current
(VDS = 0.3 V, VGS = 5.0 V)
(VDS = 0.3 V, VGS = 5.0 V, TJ = 125°C)
IDS(on) 150
100
200
mA
Forward Transconductance
(VDS = 12 V, ID = 150 mA)
gFS 400 mmho
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 12 V, VGS = 0 V, f = 10 kHz)
Ciss 30 pf
Output Capacitance
(VDS = 12 V, VGS = 0 V, f = 10 kHz)
Coss 14 pf
Transfer Capacitance
(VDS = 12 V, VGS = 0 V, f = 10 kHz)
Crss 6.0 pf
SWITCHING CHARACTERISTICS
Propagation Delay Times:
High to Low Propagation Delay; Figure 2, (VDS = 12 V, VGS = 3.0 V)
Low to High Propagation Delay; Figure 2, (VDS = 12 V, VGS = 3.0 V)
High to Low Propagation Delay; Figure 2, (VDS = 12 V, VGS = 5.0 V)
Low to High Propagation Delay; Figure 2, (VDS = 12 V, VGS = 5.0 V)
tPHL
tPLH
tPHL
tPLH
918
798
331
1160
ns
Transition Times:
Fall Time; Figure 2, (VDS = 12 V, VGS = 3.0 V)
Rise Time; Figure 2, (VDS = 12 V, VGS = 3.0 V)
Fall Time; Figure 2, (VDS = 12 V, VGS = 5.0 V)
Rise Time; Figure 2, (VDS = 12 V, VGS = 5.0 V)
tf
tr
tf
tr
2290
618
622
600
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NUD3160, SZNUD3160
www.onsemi.com
5
TYPICAL WAVEFORMS
(TJ = 25°C unless otherwise specified)
Figure 2. Switching Waveforms
Load Dump Pulse Not Suppressed:
Vr = 13.5 V Nominal ±10%
VS = 60 V Nominal ±10%
T = 300 ms Nominal ±10%
tr = 1 10 ms ±10%
Figure 3. Load Dump Waveform Definition
VS
tr
90%
10%
T
Vr, Ir
10% of Peak;
Reference = Vr, Ir
Vout
Vin
0 V
VOH
VIH
tr
tf
tPLH
tPHL
50%
90%
50%
10% VOL
NUD3160, SZNUD3160
www.onsemi.com
6
TYPICAL PERFORMANCE CURVES
(TJ = 25°C unless otherwise specified)
Figure 4. DraintoSource Leakage vs.
Junction Temperature
Figure 5. GatetoSource Leakage vs.
Junction Temperature
Figure 6. Breakdown Voltage vs.
Junction Temperature
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
75502502550
0
10
20
30
40
50
80
100502502550
20
30
40
50
60
70
80
Figure 7. Output Characteristics
TJ, JUNCTION TEMPERATURE (°C)
1255002550
65.0
65.2
65.4
65.8
66.0
66.4
IDSS, DRAIN LEAKAGE (mA)
125100 75 125
IGSS GATE LEAKAGE (mA)
VGS = 5 V
VGS = 3 V
25 10075
65.6
64.8
BVDSS BREAKDOWN VOLTAGE (V)
ID = 10 mA
Figure 8. Transfer Function
VDS = 60 V
Figure 9. On Resistance Variation vs
Junction Temperature
VDS, DRAINTOSOURCE VOLTAGE (V)
0.70.50.40.30.20.0
1E03
1E02
1E01
1E+00
1E+01
1E+03
0.1 0.6 0.8
ID DRAIN CURRENT (mA)
VGS = 5 V VGS = 3 V
60
VGS = 2 V
VGS = 2.5 V
VGS = 1.5 V
VGS, GATETOSOURCE VOLTAGE (V)
2.62.01.81.61.41.0
1E07
1E05
1E06
1E04
0.1
1
1.2 2.4
ID DRAIN CURRENT (mA)
125 °C
2.2
0.001
0.01
85 °C25 °C40 °C
VDS = 0.8 V
TJ, JUNCTION TEMPERATURE (°C)
75502502550
800
1200
1600
2000
2400
2800
RDS(ON), DRAINTOSOURCE RESISTANCE (mW)
125100
ID = 0.15 A
3200
VGS = 5.0 V
VGS = 3.0 V
70
66.2 1E+02
NUD3160, SZNUD3160
www.onsemi.com
7
TYPICAL PERFORMANCE CURVES
(TJ = 25°C unless otherwise specified)
Figure 10. On Resistance Variation vs.
GatetoSource Voltage
Figure 11. Zener Clamp Voltage vs. Zener
Current
VGS, GATETOSOURCE VOLTAGE (V)
2.21.81.61.41.21.0
0
10
20
30
40
50
60
2.0 2.4
ID = 250 mA
IZ, ZENER CURRENT (mA)
101.00.1
62.0
62.5
63.0
63.5
64.0
64.5
65.0
100 1000
VZ ZENER CLAMP VOLTAGE (V)
70
80
90
100
RDS(ON), DRAINTOSOURCE
RESISTANCE (mW)
125 °C
85 °C
25 °C
40 °C125 °C
85 °C
25 °C
40 °C
65.5
66.0
2.82.6 3.0
66.5
67.0
67.5
68.0
Figure 12. Maximum Nonrepetitive Surge
Power vs. Pulse Width
PW, PULSE WIDTH (ms)
100100.1
1
10
100
POWER (WATTS)
1.0
Figure 13. Thermal Performance vs. Board
Copper Area
COPPER AREA (mm2)
7005000
200
400
600
qJA (°C/W)
100 200 300 400 600
300
500
SC741
SC742
SOT23
SC741 (One Device Powered)
SC742 (Both Devices Powered Equally)
1 oz. Copper, Singlesided Board
NUD3160, SZNUD3160
www.onsemi.com
8
Figure 14. Applications Diagram
12 V Battery
+
Micro
Processor
Signal
for
Relay
APPLICATIONS INFORMATION
Relay, Vibrator,
or
Inductive Load
NO
NC
NUD3160
Gate (1) 10 k
100 K
Drain (3)
Source (2)
NUD3160, SZNUD3160
www.onsemi.com
9
PACKAGE DIMENSIONS
SOT23 (TO236)
CASE 31808
ISSUE AR
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.027
c
0−−− 10 0 −−− 10
T____
T
3X
TOP VIEW
SIDE VIEW
END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
NUD3160, SZNUD3160
www.onsemi.com
10
PACKAGE DIMENSIONS
SC74
CASE 318F05
ISSUE N
23
456
D
1
e
b
E
A1
A
0.05 (0.002)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 318F01, 02, 03, 04 OBSOLETE. NEW STANDARD 318F05.
C
L
0.7
0.028
1.9
0.074
0.95
0.037
2.4
0.094
1.0
0.039
0.95
0.037
ǒmm
inchesǓ
SCALE 10:1
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HE
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.90 1.00 1.10 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.25 0.37 0.50 0.010
c0.10 0.18 0.26 0.004
D2.90 3.00 3.10 0.114
E1.30 1.50 1.70 0.051
e0.85 0.95 1.05 0.034
0.20 0.40 0.60 0.008
0.039 0.043
0.002 0.004
0.015 0.020
0.007 0.010
0.118 0.122
0.059 0.067
0.037 0.041
0.016 0.024
NOM MAX
2.50 2.75 3.00 0.099 0.108 0.118
HE
L
0°10°0°10°
q
q
STYLE 7:
PIN 1. SOURCE 1
2. GATE 1
3. DRAIN 2
4. SOURCE 2
5. GATE 2
6. DRAIN 1
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PUBLICATION ORDERING INFORMATION
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USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81358171050
NUD3160/D
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