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NUD/SZNUD3124 Datasheet

ON Semiconductor

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Datasheet

© Semiconductor Components Industries, LLC, 2002
October, 2016 Rev. 13
1Publication Order Number:
NUD3124/D
NUD3124, SZNUD3124
Automotive Inductive Load
Driver
This microintegrated part provides a single component solution to
switch inductive loads such as relays, solenoids, and small DC motors
without the need of a freewheeling diode. It accepts logic level
inputs, thus allowing it to be driven by a large variety of devices
including logic gates, inverters, and microcontrollers.
Features
Provides Robust Interface between D.C. Relay Coils and Sensitive
Logic
Capable of Driving Relay Coils Rated up to 150 mA at 12 Volts
Replaces 3 or 4 Discrete Components for Lower Cost
Internal Zener Eliminates Need for FreeWheeling Diode
Meets Load Dump and other Automotive Specs
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable
These are PbFree Devices
Typical Applications
Automotive and Industrial Environment
Drives Window, Latch, Door, and Antenna Relays
Benefits
Reduced PCB Space
Standardized Driver for Wide Range of Relays
Simplifies Circuit Design and PCB Layout
Compliance with Automotive Specifications
Gate (1) 10 k
100 K
Drain (3)
Source (2)
INTERNAL CIRCUIT DIAGRAMS
Gate (2) 10 k
100 K
Drain (6)
Source (1)
Gate (5)
Drain (3)
Source (4)
10 k
100 K
CASE 318 CASE 318F
www.onsemi.com
MARKING DIAGRAMS
SOT23
CASE 318
STYLE 21
JW6 MG
G
JW6 = Specific Device Code
M = Date Code
G= PbFree Package
(Note: Microdot may be in either location)
SC74
CASE 318F
STYLE 7
JW6 = Specific Device Code
M = Date Code
G= PbFree Package
(Note: Microdot may be in either location)
JW6 MG
G
1
2
3
1
6
Device Package Shipping
ORDERING INFORMATION
NUD3124LT1G SOT23
(PbFree)
3000 / Tape &
Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NUD3124DMT1G SC74
(PbFree)
3000 / Tape &
Reel
SZNUD3124LT1G SOT23
(PbFree)
3000 / Tape &
Reel
SZNUD3124DMT1G SC74
(PbFree)
3000 / Tape &
Reel
NUD3124, SZNUD3124
www.onsemi.com
2
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Symbol Rating Value Unit
VDSS DraintoSource Voltage – Continuous
(TJ = 125°C)
28 V
VGSS GatetoSource Voltage – Continuous
(TJ = 125°C)
12 V
IDDrain Current – Continuous
(TJ = 125°C)
150 mA
EZSingle Pulse DraintoSource Avalanche Energy
(For Relay’s Coils/Inductive Loads of 80 W or Higher)
(TJ Initial = 85°C)
250 mJ
PPK Peak Power Dissipation, DraintoSource (Notes 1 and 2)
(TJ Initial = 85°C)
20 W
ELD1 Load Dump Suppressed Pulse, DraintoSource (Notes 3 and 4)
(Suppressed Waveform: Vs = 45 V, RSOURCE = 0.5 W, T = 200 ms)
(For Relay’s Coils/Inductive Loads of 80 W or Higher)
(TJ Initial = 85°C)
80 V
ELD2 Inductive Switching Transient 1, DraintoSource
(Waveform: RSOURCE = 10 W, T = 2.0 ms)
(For Relay’s Coils/Inductive Loads of 80 W or Higher)
(TJ Initial = 85°C)
100 V
ELD3 Inductive Switching Transient 2, DraintoSource
(Waveform: RSOURCE = 4.0 W, T = 50 ms)
(For Relay’s Coils/Inductive Loads of 80 W or Higher)
(TJ Initial = 85°C)
300 V
RevBat Reverse Battery, 10 Minutes (DraintoSource)
(For Relay’s Coils/Inductive Loads of 80 W or more)
14 V
DualVolt Dual Voltage Jump Start, 10 Minutes (DraintoSource) 28 V
ESD Human Body Model (HBM)
According to EIA/JESD22/A114 Specification
2,000 V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Nonrepetitive current square pulse 1.0 ms duration.
2. For different square pulse durations, see Figure 2.
3. Nonrepetitive load dump suppressed pulse per Figure 3.
4. For relay’s coils/inductive loads higher than 80 W, see Figure 4.
NUD3124, SZNUD3124
www.onsemi.com
3
THERMAL CHARACTERISTICS
Symbol Rating Value Unit
TAOperating Ambient Temperature 40 to 125 °C
TJMaximum Junction Temperature 150 °C
TSTG Storage Temperature Range 65 to 150 °C
PDTotal Power Dissipation (Note 5) SOT23
Derating above 25°C
225
1.8
mW
mW/°C
PDTotal Power Dissipation (Note 5) SC74
Derating above 25°C
380
3.0
mW
mW/°C
RqJA Thermal Resistance Junction–to–Ambient (Note 5) SOT23
SC74
556
329
°C/W
5. Mounted onto minimum pad board.
NUD3124, SZNUD3124
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4
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain to Source Sustaining Voltage
(ID = 10 mA)
VBRDSS 28 34 38 V
Drain to Source Leakage Current
(VDS = 12 V, VGS = 0 V)
(VDS = 12 V, VGS = 0 V, TJ = 125°C)
(VDS = 28 V, VGS = 0 V)
(VDS = 28 V, VGS = 0 V, TJ = 125°C)
IDSS
0.5
1.0
50
80
mA
Gate Body Leakage Current
(VGS = 3.0 V, VDS = 0 V)
(VGS = 3.0 V, VDS = 0 V, TJ = 125°C)
(VGS = 5.0 V, VDS = 0 V)
(VGS = 5.0 V, VDS = 0 V, TJ = 125°C)
IGSS
60
80
90
110
mA
ON CHARACTERISTICS
Gate Threshold Voltage
(VGS = VDS, ID = 1.0 mA)
(VGS = VDS, ID = 1.0 mA, TJ = 125°C)
VGS(th) 1.3
1.3
1.8
2.0
2.0
V
Drain to Source OnResistance
(ID = 150 mA, VGS = 3.0 V)
(ID = 150 mA, VGS = 3.0 V, TJ = 125°C)
(ID = 150 mA, VGS = 5.0 V)
(ID = 150 mA, VGS = 5.0 V, TJ = 125°C)
RDS(on)
1.4
1.7
0.8
1.1
W
Output Continuous Current
(VDS = 0.25 V, VGS = 3.0 V)
(VDS = 0.25 V, VGS = 3.0 V, TJ = 125°C)
IDS(on) 150
140
200
mA
Forward Transconductance
(VDS = 12 V, ID = 150 mA)
gFS 500 mmho
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 12 V, VGS = 0 V, f = 10 kHz)
Ciss 32 pf
Output Capacitance
(VDS = 12 V, VGS = 0 V, f = 10 kHz)
Coss 21 pf
Transfer Capacitance
(VDS = 12 V, VGS = 0 V, f = 10 kHz)
Crss 8.0 pf
SWITCHING CHARACTERISTICS
Propagation Delay Times:
High to Low Propagation Delay; Figure 1, (VDS = 12 V, VGS = 3.0 V)
Low to High Propagation Delay; Figure 1, (VDS = 12 V, VGS = 3.0 V)
High to Low Propagation Delay; Figure 1, (VDS = 12 V, VGS = 5.0 V)
Low to High Propagation Delay; Figure 1, (VDS = 12 V, VGS = 5.0 V)
tPHL
tPLH
tPHL
tPLH
890
912
324
1280
ns
Transition Times:
Fall Time; Figure 1, (VDS = 12 V, VGS = 3.0 V)
Rise Time; Figure 1, (VDS = 12 V, VGS = 3.0 V)
Fall Time; Figure 1, (VDS = 12 V, VGS = 5.0 V)
Rise Time; Figure 1, (VDS = 12 V, VGS = 5.0 V)
tf
tr
tf
tr
2086
708
556
725
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NUD3124, SZNUD3124
www.onsemi.com
5
TYPICAL PERFORMANCE CURVES
(TJ = 25°C unless otherwise noted)
Figure 1. Switching Waveforms
Load Dump Pulse Not Suppressed:
VR = 13.5 V Nominal ±10%
VS = 60 V Nominal ±10%
T = 300 ms Nominal ±10%
TR = 1 10 ms ±10%
Load Dump Pulse Suppressed:
NOTE: Max. Voltage DUT is exposed to is
NOTE: approximately 45 V.
VS = 30 V ±20%
T = 150 ms ±20%
Figure 2. Maximum Nonrepetitive Surge
Power versus Pulse Width
PW, PULSE WIDTH (ms)
100101
0
5
10
15
20
25
Ppk, PEAK SURGE POWER (W)
Figure 3. Load Dump Waveform Definition
VS
TR
90%
10%
T
VR, IR
10% of Peak;
Reference = VR, IR
Vout
Vin
0 V
VOH
VIH
tr
tf
tPLH
tPHL
50%
90%
50%
10% VOL
NUD3124, SZNUD3124
www.onsemi.com
6
Figure 4. Load Dump Capability versus
Relay’s Coil dc Resistance
RELAY’S COIL (W)
35026023020017014011080
40
60
80
100
120
140
Figure 5. DraintoSource Leakage versus
Junction Temperature
Figure 6. GatetoSource Leakage versus
Junction Temperature
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
75502502550
0
2
4
6
8
10
14
100502502550
20
30
40
50
60
70
80
Figure 7. Breakdown Voltage versus Junction
Temperature
TJ, JUNCTION TEMPERATURE (°C)
1255002550
33.6
33.8
34.0
34.4
34.6
34.8
VS, LOAD DUMP (VOLTS)
320290
IDSS, DRAIN LEAKAGE (mA)
125100
75 125
IGSS GATE LEAKAGE (mA)
VGS = 5 V
VGS = 3 V
25 10075
34.2
33.4
BVDSS BREAKDOWN VOLTAGE (V)
ID = 10 mA
Figure 8. Output Characteristics
VDS = 28 V
Figure 9. Transfer Function
VDS, DRAINTOSOURCE VOLTAGE (V)
0.70.50.40.30.20.0
1E10
1E08
1E06
1E04
0.01
1
0.1 0.6 0.8
ID DRAIN CURRENT (A)
VGS = 5 V
VGS = 3 V
12
VGS = 2 V
VGS = 2.5 V
VGS = 1 V
VGS, GATETOSOURCE VOLTAGE (V)
4.53.02.52.01.50.5
1E07
1E05
1E06
1E04
0.1
1
1.0 4.0 5.0
ID DRAIN CURRENT (A)
125 °C
3.5
0.001
0.01
85 °C
25 °C
40 °C
VDS = 0.8 V
NUD3124, SZNUD3124
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7
Figure 10. On Resistance Variation versus
Junction Temperature
Figure 11. On Resistance Variation versus
GatetoSource Voltage
VGS, GATETOSOURCE VOLTAGE (V)
2.21.81.61.41.21.0
0.00
0.02
0.04
0.06
0.08
0.10
0.12
2.0 2.4
ID = 250 mA
0.01 0.1 1.0 10 100 1000 10,000 100,000 1,000,000
D = 0.5
0.2
0.1
0.05
0.02
SINGLE PULSE
0.01
Pd(pk)
t1
t2
DUTY CYCLE = t1/t2
PERIOD
PW
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1.0
0.1
0.01
0.001
t1, PULSE WIDTH (ms)
Figure 12. Zener Clamp Voltage versus Zener
Current
IZ, ZENER CURRENT (mA)
101.00.1
32.0
32.5
33.0
33.5
34.0
34.5
35.0
100 1000
VZ ZENER CLAMP VOLTAGE (V)
Figure 13. Transient Thermal Response for NUD3124LT1G
TJ, JUNCTION TEMPERATURE (°C)
75502502550
400
600
800
1000
1200
1400
1800
RDS(ON), DRAINTOSOURCE RESISTANCE (mW)
125100
ID = 0.25 A
VGS = 3.0 V
1600
ID = 0.15 A
VGS = 5.0 V
ID = 0.15 A
VGS = 3.0 V
0.14
0.16
0.18
0.20
RDS(ON), DRAINTOSOURCE RESISTANCE (W)
125 °C85 °C25 °C40 °C
125 °C
85 °C
25 °C
40 °C
35.5
36.0
NUD3124, SZNUD3124
www.onsemi.com
8
Figure 14. Applications Diagram
12 V Battery
+
Micro
Processor
Signal
for
Relay
APPLICATIONS INFORMATION
Relay, Vibrator,
or
Inductive Load
NO
NC
NUD3124
Gate (1) 10 k
100 K
Drain (3)
Source (2)
NUD3124, SZNUD3124
www.onsemi.com
9
PACKAGE DIMENSIONS
SOT23 (TO236)
CASE 31808
ISSUE AR
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.027
c
0−−− 10 0 −−− 10
T____
T
3X
TOP VIEW
SIDE VIEW
END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
NUD3124, SZNUD3124
www.onsemi.com
10
PACKAGE DIMENSIONS
SC74
CASE 318F05
ISSUE N
23
456
D
1
e
b
E
A1
A
0.05 (0.002)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 318F01, 02, 03, 04 OBSOLETE. NEW STANDARD 318F05.
C
L
0.7
0.028
1.9
0.074
0.95
0.037
2.4
0.094
1.0
0.039
0.95
0.037
ǒmm
inchesǓ
SCALE 10:1
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HE
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.90 1.00 1.10 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.25 0.37 0.50 0.010
c0.10 0.18 0.26 0.004
D2.90 3.00 3.10 0.114
E1.30 1.50 1.70 0.051
e0.85 0.95 1.05 0.034
0.20 0.40 0.60 0.008
0.039 0.043
0.002 0.004
0.015 0.020
0.007 0.010
0.118 0.122
0.059 0.067
0.037 0.041
0.016 0.024
NOM MAX
2.50 2.75 3.00 0.099 0.108 0.118
HE
L
0°10°0°10°
q
q
STYLE 7:
PIN 1. SOURCE 1
2. GATE 1
3. DRAIN 2
4. SOURCE 2
5. GATE 2
6. DRAIN 1
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PUBLICATION ORDERING INFORMATION
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Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
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Phone: 81358171050
NUD3124/D
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